76 GHz flip-chip MMICs for automotive radars

Shimura, T.; Kawasaki, Yoji; Ōhashi, Y.; Shirakawa, K.; Hirose, Takahisa; Aoki, Shigeki; Someta, H.; Makiyama, Kozo; Yokokawa, S.

doi:10.1109/rfic.1998.682040

Cited by 27 publications

(8 citation statements)

References 5 publications

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“…To decrease the assembly cost, each MMIC such as the oscillator and the amplifier should be integrated to a single chip. In the reported GaAs-MMICs, the HBT process, which can suppress 1/f noise, is employed for oscillators whereas the HEMT process is used for amplifiers and multipliers because of the high gain characteristics at the millimeter wave band [1][2][3][4][5][6]. As just described, an RF front-end consists of some MMICs because of different processes.…”

Section: Introductionmentioning

confidence: 99%

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Kanaya

Amasuga

Watanabe

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show that the recombination current that can affect 1/f noise and reliability originates from the surface of the base. We have optimized the ledge and passivation film on the base surface of InP/GaAsSb DHBT. The optimized DHBT offers 7 dB lower 1/f noise level than the non-optimized DHBT. Additionally, in the high temperature burn-in test, no degradation has been induced even after 1,000 hr. It can satisfy the criterion of automotive radars. The W-band oscillator with the optimized DHBT delivers a remarkably low phase noise of -107 dBc/Hz at 1MHz-offset. This phase noise is 10 dB lower than that of the non-optimized HBT oscillator. These results experimentally confirm that decreasing 1/f noise is effective for the design of a low phase noise oscillator using InP/GaAsSb DHBT.To our knowledge, this is the first report to reveal that the base surface structure of InP/GaAsSb DHBT is a key factor in the improvement of reliability and phase noise.

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Section: Introductionmentioning

confidence: 99%

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Kanaya

Amasuga

Watanabe

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…A development of a chip-set for narrow band FSK radar has already been done, described in [2] and is now in production. Some MMICbased solutions are proposed for FMCW modulation [1], [4] but the level of characterization and performance is still limited. The first UMS specific components for FMCW-oriented source was presented in [3].…”

Section: Introductionmentioning

confidence: 99%

Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz

Camiade

Domnesque

Ouarch

et al. 2000

30th European Microwave Conference, 2000

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“…The main application in the 77 GHz frequency range is automotive radar from 76 GHz to 77 GHz. Several building blocks have been published in III-V technology [5], [6]. Also front ends [7] or complete systems [8] in these technologies are available.…”

Section: Introductionmentioning

confidence: 99%