70 m&amp;#x03A9;/600 V normally-off GaN transistors on SiC and Si substrates

Hilt, Oliver; Zhytnytska, Rimma; Böcker, Jan; Bahat‐Treidel, Eldad; Brunner, F.; Knauer, A.; Dieckerhoff, Sibylle; Würfl, Joachim

doi:10.1109/ispsd.2015.7123433

Cited by 29 publications

(25 citation statements)

References 6 publications

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“…State-of-the-art p-GaN gate transistors with 600 V breakdown strength feature one-volt threshold voltage, low off-state leakage currents of 10 nA/mm for zero-volt gate bias and 0.4 A/mm drain current for on-state conditions at typically five-volt gate bias ( Figure 4a,b). The on-state resistance is 13 Ωmm and 60 mΩ/600 V transistors with 100 A pulse capability can thus be realized with 200 mm gate periphery ( Figure 4c) [24]. For power applications, threshold voltage ranges above +1 V are desirable to ensure safe operation.…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

“…Panasonic pioneered the development towards power-electronic normally-off 600 V switches [22,23]. The principal idea has also been taken up by other institutions leading to very successful GaN normally-off devices [24,25]. In a concept variation, the extrinsic p-type semiconductor material NiO x has been taken instead of a III-N semiconductor [26].…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

“…The combination of GaN channel thickness and buffer layer material properties and dimensions have to be optimized accordingly. The p-GaN technology already provided some impressive device results and could demonstrate safe and practically dispersion-free device operation up to 650 V. Similar to MIS-type and Schottky-type GaN HFETs, p-GaN HFETs of the 600-650 V class have demonstrated very low capacitances, gate charge and area-specific on-state resistances and outperform Si-based superjunction MOSFETs [24,34]. GaN power switching transistors showing significantly reduced dynamic on-state resistance normally rely on compensated (in many cases C-doped) buffer structures often in combination with ternary AlGaN layers [34][35][36].…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

“…GaN power switching transistors showing significantly reduced dynamic on-state resistance normally rely on compensated (in many cases C-doped) buffer structures often in combination with ternary AlGaN layers [34][35][36]. The dynamic R ON data for 400-600 V switching of p-GaN gate HFETs ( Figure 6) are competitive to values achieved with normally-on HFETs using MIS or Schottky-type gate modules [22,24]. The dynamic R ON in HV GaN-HFETs seems to be still dominated by buffer related trapping effects.…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

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Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

See 2 more Smart Citations

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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“…There known two different concepts to produce normallyoff GaN devices: Schottky and Ohmic p-gate devices. Panasonic [15] - [16] and FBH [17] - [19] are used the Ohmic contact to p-GaN layer, but Samsung [20] and IMEC [21] are used the W and TiN based Schottky gate contacts. A detailed investigation of the impact of gate metal on the performance of p-GaN/AlGaN/GaN transistors was presented in [22].…”

Section: Advances In Computer Science Research (Acsr) Volume 72mentioning

confidence: 99%

TCAD simulation of MIS-gated power GaN transistors

Erofeev¹,

Fedin²,

Kutkov³

et al. 2017

Proceedings of the IV International Research Conference "Information Technologies in Science, Management, Social Sphere and Med

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Challenges for energy efficient wide band gap semiconductor power devices

Roccaforte

Fiorenza

Greco

et al. 2014

Phys. Status Solidi A

111

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Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency of devices and modules. As a matter of fact, in the last decade intensive academic and industrial research efforts have resulted in the demonstration of both 4H‐SiC MOSFETs and GaN HEMTs exhibiting VnormalB2/Ron performances well beyond the silicon limits. In this paper, some of the present scientific challenges for SiC and GaN power devices technology are reviewed. In particular, the topics selected in this work will be the SiO2/SiC interface passivation processes to improve the channel mobility in 4H‐SiC MOSFETs, the current trends for gate dielectrics in GaN technology and the viable routes to obtain normally‐off HEMTs.

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70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Cited by 29 publications

References 6 publications

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

TCAD simulation of MIS-gated power GaN transistors

Challenges for energy efficient wide band gap semiconductor power devices

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