TCAD simulation of MIS-gated power GaN transistors

Erofeev, E. V.; Fedin, I.; Kutkov, I. V.; Fedina, V. V.

doi:10.2991/itsmssm-17.2017.9

Proceedings of the IV International Research Conference "Information Technologies in Science, Management, Social Sphere and Med 2017

DOI: 10.2991/itsmssm-17.2017.9

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TCAD simulation of MIS-gated power GaN transistors

E. V. Erofeev¹,

I. Fedin²,

I. V. Kutkov³

et al.

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TCAD simulation of MIS-gated power GaN transistors

Abstract: Abstract-E-mode

Cited by 0 publications

References 17 publications

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