7/5nm logic manufacturing capabilities and requirements of metrology

Bunday, Benjamin; Bello, A. F.; Solecky, Eric; Vaid, Alok

doi:10.1117/12.2296679

Cited by 29 publications

(24 citation statements)

References 30 publications

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“…Other challenges include measurement of strain 46 , defect density, composition, and material dielectric interfaces for 2D and 3D materials. More broadly, most of the challenges involve measurement of dimensional, compositional, and interconnect parameters for 3D structures such as GAA nanowire, and 3DVLSI 47 where each technology level could have different metrology needs. Select dimensional parameters and requirements from the 2017 IRDS metrology roadmap 4 include VGAA nanowire diameter (6 nm), half pitch (7 nm), nanowire roughness and uniformity (0.3 nm) for the years 2030 to 2033; gate length (14 nm) and surface roughness (0.12 nm) for the years 2027 to 2033.…”

Section: Metrology Challenges For Complex Ic Device Structuresmentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Section: Metrology Challenges For Complex Ic Device Structuresmentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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“…Therefore, metrology tools that are suited for the measurement of these complex geometries need to be developed (Orji et al, 2018). One technique which is considered for this purpose is critical dimension small-angle x-ray scattering in M Pflüger, RJ Kline, A Fernández Herrero, M Hammerschmidt, V Soltwisch, M Krumrey: Extracting Dimensional Parameters of Gratings Produced with Self-Aligned Multiple Patterning Using GISAXS transmission (CD-SAXS) or reflection grazing incidence (CD-GISAXS) geometry (Bunday et al, 2018). X-ray scattering probes the average structure with nm precision over a relatively large (µm 2 ) area (Jones et al, 2003;Sunday et al, 2015).…”

Section: Introductionmentioning

confidence: 99%

“…X-ray scattering probes the average structure with nm precision over a relatively large (µm 2 ) area (Jones et al, 2003;Sunday et al, 2015). A key problem of scattering in the transmission geometry is that high X-ray intensities and long measurement times are needed to penetrate the full sample (Bunday et al, 2018). In contrast, in reflection geometry a small X-ray incidence angle leads to high reflectance and therefore to shorter measurement times even at lower X-ray intensities (Levine et al, 1989).…”

Section: Introductionmentioning

confidence: 99%

Extracting dimensional parameters of gratings produced with self-aligned multiple patterning using grazing-incidence small-angle x-ray scattering

Pflüger

Kline

Herrero

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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To ensure consistent and high-quality semiconductor production, additional metrology tools are needed to measure the smallest structures. Due to its high statistical power and the well-known X-ray optical constants, small-angle X-ray scattering (SAXS) is being considered for this purpose. Compared to transmission SAXS, signal intensities can be enhanced dramatically by using small incidence angles in reflection geometry (Grazing-Incidence SAXS, GISAXS), enabling quick measurements. The capability to reconstruct average line shapes from GISAXS measurements of gratings has already been proven. However, GISAXS has so far not been used to reconstruct line shapes of gratings with pitches smaller than 50 nm, which are standard in current-generation semiconductor manufacturing. In this paper, GISAXS is used to reconstruct the line profile of a grating with 32 nm pitch produced by self-aligned quadruple patterning (SAQP). It is found that the reconstructed shape is generally in agreement with previously published SAXS results. However, the reconstructed line height and line width show deviations of 1.0(2) nm and 2.0(7) nm, respectively. Additionally, a series of grating samples with deliberately introduced pitchwalk was measured. Here, it is found that GISAXS yields the pitchwalk in agreement with the SAXS results, with uncertainties ranging from < 0.5 nm for small pitchwalks (< 2 nm) up to ≈ 2 nm for larger pitchwalks.

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“…Existing and new dimensional measurement techniques continue to be modified and further developed. 4,9,11 .…”

mentioning

confidence: 99%

“…The average incident current density normal to the sample surface is 8.8 A/m 2 , a value of interest if sample damage or charging is a concern. 1, 3,4 The second configuration, with apertures of diameter 100 μm, has angular resolution α = 10 −4 rad = 0.006°. For θ r = 0.2°, the footprint length along the major axis is 2a fp = 44 μm, a much smaller value due to the negligible amount of Rayleigh broadening using the larger aperture.…”

mentioning

confidence: 99%

Electron reflectometry for measuring nanostructures on opaque substrates

Friedman

2019

Applied Physics Letters

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Here, we present a method for measuring dimensions of nanostructures using specular reflection of electrons from an electronically opaque surface. Development of this method has been motivated by measurement needs of the semiconductor industry 1-4 , and it can also be more broadly applicable to any periodic, pseudo-periodic or statistically stationary nanostructures or nanopattern on an opaque substrate. In prior work 5,6 , it was demonstrated through the presentation of proof of concept experiments and simulated examples that Reflective Small Angle Electron Scattering (RSAES) can meet certain dimensional metrology requirements of the semiconductor industry. In RSAES, an entire reflected scattering pattern is measured, with the scattered electrons being of primary interest. Later, in the process of further simulating RSAES, it was serendipitously discovered that dimensional measurement using reflected electrons might be greatly simplified by Electron Reflectometry (ER), whereby the intensity of the specularly reflected electron beam is measured and the scattered beams ignored. 7 This innovation may allow faster and cheaper development and deployment or at the very least provide an alternate pathway to exploit the phenomenon of reflected electrons for dimensional measurement. Here we discuss how ER complements existing dimensional measurement techniques, show simulated applications with an emphasis an defect detection and line-width measurements. Dimensional metrology needs of the electronics and semiconductor industry 1-4 are primarily addressed through the techniques of X-Ray scattering 8,9 , optical scatterometry (or optical critical dimension metrology, OCD) 3,10 , scanning and transmission electron microscopy (SEM and TEM), and scanning probe microscopy (SPM). Each technique has its advantages and disadvantages, but electron reflection may be well suited for measuring threedimensional features smaller than 10 nm with: (1) high dimensional precision, (2) measurement footprint with linear dimension smaller than 100 μm, (3) little to no sample preparation, (4) strong output signal. Furthermore, when used in a hybrid measurement scheme, it is anticipated that RSAES and ER will serve to resolve parameter crosscorrelation 1,3,4 because of their strong response to surface geometry. For more discussion

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7/5nm logic manufacturing capabilities and requirements of metrology

Cited by 29 publications

References 30 publications

Metrology for the next generation of semiconductor devices

Metrology for the next generation of semiconductor devices

Extracting dimensional parameters of gratings produced with self-aligned multiple patterning using grazing-incidence small-angle x-ray scattering

Electron reflectometry for measuring nanostructures on opaque substrates

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