7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Im, Jae-Woo; Jeong, Won-Ki; Kim, Doo-Hyun; Nam, Sang-Wan; Shim, Dong-Kyo; Choi, Minsuk; Yoon, Hyun-Jun; Kim, Daehan; Kim, Youse; Park, Hyun-Wook; Kwak, Donghun; Park, Sang-Won; Yoon, Seok-Min; Hahn, Wook-Ghee; Ryu, Jiseon; Shim, Sang-Won; Kang, Kyung‐Tae; Choi, Sungho; Ihm, Jeong-Don; Min, Young-Sun; Kim, In-Mo; Lee, Doo-Sub; Cho, Ji-Ho; Kwon, O.H.; Lee, Ji-Sang; Kim, Moo-Sung; Joo, Sanghoon; Jang, Jae Hoon; Hwang, Sang-Won; Byeon, Dae–Seok; Yang, Hyang-Ja; Park, Kitae; Kyung, Kye-Hyun; Choi, Jung Kyu

doi:10.1109/isscc.2015.7062960

Cited by 57 publications

(29 citation statements)

References 4 publications

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“…Figure 35 shows the endurance performance of a 3D NAND cell as a function of N C [286] and the V T distribution for a NAND array after heavy cycling [22]. Because of the larger cell size, 3D NAND are reported to have better endurance properties with respect to their planar counterpart, as also claimed in [293][294][295][296], where an endurance of 5-7 k P/E cycles is reported for a TLC 3D NAND. All these cells feature an ONO stack.…”

Section: D Nand Reliabilitymentioning

confidence: 57%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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Section: D Nand Reliabilitymentioning

confidence: 57%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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“…The second V-NAND generation has been introduced in 2015 by increasing the storage bit density from two bits/cell to three bits/cell [12]. Comparing with the previous generation, there were not many macroscopic changes in the memory cell structure, although the number of layers switched from 24 to 32.…”

Section: V-nand Architecturementioning

confidence: 99%

“…The bitlines layout is different as sketched in Figure 23. In this case, two bitlines are arranged in a single pillar pitch [12]. BL density is doubled (i.e., the NAND Flash page size step from 8 kB to 16 kB), but the number of contacts to the SL plate is halved.…”

Section: V-nand Architecturementioning

confidence: 99%

“…In the second category, we will provide the description of several architectures like: the Bit Cost Scalable (BiCS) presented for the first time by Toshiba [8,9], its improved version, namely the Pipe-shaped Bit Cost Scalable (P-BiCS) [10,11], and the pathway to the V-NAND architecture from Samsung [12,13] ranging from the Vertical Recess Array Transistor (VRAT) [14], the Vertical Stacked Array Transistor (VSAT) [15], and the Terabit Cell Array Transistor (TCAT) [16].…”

Section: Introductionmentioning

confidence: 99%

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Architectural and Integration Options for 3D NAND Flash Memories

Micheloni

Crippa²,

Zambelli

et al. 2017

Computers

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Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in consumer and enterprise scenarios. To keep the evolutionary pace of the technology, NAND Flash must scale aggressively in terms of bit cost. When approaching ultra-scaled technologies, planar NAND is hitting a wall: both academia researchers and industry worked to cope with this issue for several decades. Then, the 3D integration approach turned out to be the definitive alternative by eventually reaching mass production. This review paper exposes several 3D NAND Flash memory technologies, along with their related integration challenges, by showing their different layouts, scaling trends and performance/reliability features.

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“…Since 3D NAND Flash has come to market in 2014 [1], the memory array size has been nearly doubled every year [2,3,4]. The increasing density of 3D NAND flash array causes the increasing parasitic capacitance of word lines (WLs).…”

Section: Introductionmentioning

confidence: 99%

A 1.2 mV ripple, 4.5 V charge pump using controllable pumping current technology

Huang

Wang

Chen

et al. 2017

IEICE Electron. Express

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This paper represents a 4.5 V regulated charge pump with extremely small ripple. The pump designed with Voltage Doubler (VD) significantly reduces the output ripple voltage. In addition, this circuit utilizes a controllable pumping current (CPC) technology, which achieves automatically adjusting output current by feedback mechanism and resizing transfer transistors. The proposed charge pump has been demonstrated in 0.32 µm 3D NAND periphery technology under 3 V power supply. Simulation results show that the output ripple voltage is 1.2 mV at 5 mA load current with 0.1 µF load capacitance. The maximum current drivability and power efficiency is 8 mA and 81% respectively.

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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Cited by 57 publications

References 4 publications

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Architectural and Integration Options for 3D NAND Flash Memories

A 1.2 mV ripple, 4.5 V charge pump using controllable pumping current technology

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