650nm Resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors

Lei, Po-Hsun; Yang, Chyi-Dar

doi:10.1016/j.sse.2007.07.036

Cited by 6 publications

(5 citation statements)

References 23 publications

(22 reference statements)

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“…[1][2][3][4][5][6][7][8] In particular, silicon dioxide (SiO 2 ) and silicon nitride (SiN x ) layers are routinely deposited onto GaAs(100) and other III-V(100) semiconductors at different steps of device processing. [9][10][11] For example, these dielectrics are used for surface protection, electrical insulation in laser diodes, antireflection coatings, and distributed Bragg reflectors, and for selective quantum well (QW) intermixing. The previous studies of SiO 2 /and SiN x /GaAs junctions have revealed Ga diffusion into the insulators, [12][13][14] As diffusion into the insulators, 13 As-cluster formation due to nitridation and annealing of GaAs, 15 annealing-induced improvement of the interfaces, 15,16 and defect formation at high-temperature annealings.…”

mentioning

confidence: 99%

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Dahl

Polojärvi

Salmi

et al. 2011

Applied Physics Letters

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SiO2 and SiNx layers are routinely deposited onto III-V(100) surfaces at different device processing steps. We elucidate these insulator-interface properties with photoemission and photoluminescence (PL) of SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum wells (QWs). Post-growth annealing led to an increase of the QW-PL intensity, of which origin can be clearly linked to the SiO2 and SiNx interfaces. Concomitantly, Ga2O–related photoemission increased, indicating useful formation of Ga2O at both insulator interfaces. Furthermore, higher Ga-oxidation-state emission, identified with Ga diffused into SiO2 and SiNx, correlates with the blue-shift of the QW-PL wavelength. Also, interfacial As-As related photoemission was identified.

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mentioning

confidence: 99%

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Dahl

Polojärvi

Salmi

et al. 2011

Applied Physics Letters

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“…However, experimental results of the external efficiency for RCLEDs around 650 nm wavelength are still not satisfied [9][10][11][12]. By now, most efforts such as special mirrors [13], photonic crystal [14] and 2-D grating [15] are made to improve RCLEDs quantum extraction efficiency, while less attention is paid to the internal quantum efficiency which is very important for RCLEDs with a narrow active region.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

Li¹,

Liu²,

Li³

et al. 2013

OPJ

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High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.

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“…Gallium nitride (GaN) series materials have become the dominant semiconductor systems used to achieve ultraviolet, blue, green and white light emission [1][2][3]. Recently, GaNbased resonant cavity light emitting diodes (RCLEDs) have attracted much attention due to their applications in optical storage systems and plastic optical fiber (POF) [4][5][6]. It is known that green RCLEDs are suitable as a light source in POF applications for its lowest attenuation in optical fiber propagation.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the device structure also contains a current confinement layer for improving the light directionality and light output efficiency [7]. Typical current confinement layers to redistribute current spreading are made of insulating material such as SiO 2 [8,9], or high-resistivity material from selective oxidation [10,11] and ion implantation [12]. They all proved improvements in the light output efficiency.…”

Section: Introductionmentioning

confidence: 99%

Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

Huang

Horng

Tsai

et al. 2010

Semicond. Sci. Technol.

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GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 10 13 , 10 14 and 10 15 ions cm −2 ) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 10 14 ions cm −2 has been determined based on the current confinement performance. Under this condition, the 10 14 ions cm −2 implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO 2 -insulated RCLED one. Furthermore, the light emission pattern of the 10 14 ions cm −2 implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.

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650nm Resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors

Cited by 6 publications

References 23 publications

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

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