Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

Abstract

<p class="MsoNormal"> <span lang="EN-US">High efficiency 650</span><span lang="EN-US"> </span><span lang="EN-US">nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al</span><span lang="EN-US"> </span><span lang="EN-US">0.5Ga</span><span lang="EN-US"> </span><span lang="EN-US">0.5</span><span lang="EN-US"> </span><span lang="EN-US">As/Al</span><span lang="EN-US"> </span><span lang="EN-US">As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100</span><span lang="EN-US"> </span><span lang="EN-US">mA.</span> </p