Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs

Abstract

GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 10 13 , 10 14 and 10 15 ions cm −2 ) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 10 14 ions cm −2 has been determined based on the current confinement performance. Under this condition, the 10 14 ions cm −2 implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO 2 -insulated RCLED one. Furthermore, the light emission pattern of the 10 14 ions cm −2 implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.

Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

“…Gallium nitride resonant-cavity light-emitting diodes (RC-LEDs) and vertical-cavity surface-emitting lasers (VCSELs) are promising for next-generation displays and portable electronics. For the ion implantation methods on GaN materials, H + -implanted RC-LED structures, , Mg + -implanted current blocking layer adoption, embedded void structures via Si-implanted GaN templates, and P ion implantation to improve Mg dopant activation in a p-GaN layer have been reported for light output power enhancement. Gallium nitride VCSELs with curved dielectric distributed Bragg reflector (DBR) and B ion implantation techniques have been investigated for carrier and lateral optical confinement. − Semipolor GaN blue VCSEL devices with a buried tunnel junction design and Al ion implantation were also demonstrated to discuss polarization and filamentary lasing .…”