650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

Smowton, Peter M.; Lewis, G.M.; Yin, Min; Summers, Huw D.; Berry, G.; Button, Chris

doi:10.1109/2944.788444

Cited by 22 publications

(8 citation statements)

References 7 publications

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“…3,4) Expanding the optical near field in the direction perpendicular to the growth plane produced a reduced beam divergence angle of the far-field beam profile, because it decreased optical confinement in the same direction. 5) In addition, due to the decrease in the optical density because of the expanded optical near field, the catastrophic optical damage (COD) level was increased. An AlGaInP extra-high-refractive-index layer was adopted for AlGaInP LDs in order to expand the optical near field, and the results showed a reduced vertical beam divergence angle (full width at half maximum: FWHM) of 24 .…”

Section: Introductionmentioning

confidence: 99%

“…An AlGaInP extra-high-refractive-index layer was adopted for AlGaInP LDs in order to expand the optical near field, and the results showed a reduced vertical beam divergence angle (full width at half maximum: FWHM) of 24 . 5) The method of employing an asymmetric cladding layer in which the n-cladding layer has a different refractive index from that of the p-cladding layer was presented for 980 nm AlGaInAs LDs 6) and 660 nm AlGaInP LDs. 7) By substituting a conventional n-cladding layer with a two-step n-cladding layer, we recently reported the feasibility test results for 660 nm AlGaInP stripe LDs with a reduced vertical divergence angle of 14.8 showing insignificant degradation in LD characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Cho

Lee

et al. 2006

jjap

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Very efficient and reliable GaInP/AlGaInP red multiple-quantum-well laser diodes for recordable/rewritable digital versatile disc (DVD-R/RW) were successfully developed by low-damage fabrication. Because we adopted dry etching instead of conventional chemical wet etching for the steep ridge sidewalls of laser diodes (LDs), devices could be operated at a high output power over 200 mW at 70 C without showing any unstable higher-order transverse modes. In-situ monitoring tools in metal organic chemical vapor deposition (MOCVD) and dry etching were useful for controlling process parameters precisely, which enhances device characteristics and maintains the reproducibility of device fabrication. A very small beam aspect ratio of 1.78 with a very low vertical beam divergence angle of 15.3 at a high output power was achieved by optimizing the twostep n-cladding layer in our LD structures. These low values of the vertical beam divergence angle and aspect ratio are essential for minimizing the coupling loss between the LD and the objective lens in DVD pickups.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Cho

Lee

et al. 2006

jjap

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show abstract

“…Several laser structures have been demonstrated to reduce the vertical beam divergence. These approaches include using a super large optical cavity [5], a low index quantum barrier [6], a mode expansion layer [7], an antiguiding layer [8], and a photonic crystal (PC) structure [9,10].…”

Section: Introductionmentioning

confidence: 99%

Mode engineering of semiconductor lasers with vertical periodic layered structures

Zhang¹,

Ma²,

Zhou³

et al. 2021

J. Phys. D: Appl. Phys.

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High-power and low-divergence semiconductor lasers are useful in light detection and ranging, as well as material processing and so on. In this paper, an efficient approach is presented to explain the physics of mode selection in semiconductor lasers with vertical periodic layers for high power and low vertical beam divergence. The transmission matrix method is used to obtain the allowed band and forbidden band of the vertical periodic layered structure, and the band diagram of the layered structure of the semiconductor laser. The fundamental mode of the layered structure of the semiconductor laser lies in the forbidden band of the vertical periodic layered structure. Tapered lasers based on the designed layered structure are fabricated and can achieve an output power of 2.45 W. The measured vertical divergence angle of the tapered laser is below 10°, consistent well with the calculated result of 9.5°.

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“…The first approach is based on the concept of inserting a high index layer, or mode expansion layer, in the cladding layer ( Fig. 1a) (Smowton et al 1999;Wenzel et al 2001). This high index layer serves to expand the optical mode by creating vertical side lobes in the near field distribution, which can produce a significant decrease in the vertical far-field divergence while maintaining a high confinement factor.…”

Section: Introductionmentioning

confidence: 99%

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

et al. 2008

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In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 µm GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.

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650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

Cited by 22 publications

References 7 publications

Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Mode engineering of semiconductor lasers with vertical periodic layered structures

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

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