To achieve high characteristics temperature and high power operation of 1.55 µm diode laser, a new way, which could reduce the Auger recombination by optimizing the active region, is shown. InGaAlAs multiple quantum well (MQW) are investigated. Some important parameters, such as the number of quantum well (QW) and composition of the barriers, are optimized to reduce the Auger recombination. The strain of QW is designed with the goal of improving the temperature performance. The threshold characteristics of current and differential quantum efficiency are obtained by adjustment of ambient temperature during modeling.Material gain, cm -