640x512 InGaAs focal plane array camera for visible and SWIR imaging

Martin, Tara; Brubaker, R. M.; Dixon, Peter; Gagliardi, Mari-Anne; Sudol, Tom

doi:10.1117/12.603406

Cited by 45 publications

(35 citation statements)

References 5 publications

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“…13 Image sensors for the SWIR range generally comprise arrays of III-V photodetectors that have little spectral selectivity. 14 The ability to perform imaging in a spectrallyresolved manner, i.e., multispectral imaging, is advantageous for many applications. Current approaches to multispectral imaging 15 often employ tunable filters, line scanning, multiple cameras, or motorized filter wheels, but these add cost, weight, and bulk.…”

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confidence: 99%

Vertical germanium nanowires as spectrally-selective absorbers across the visible-to-infrared

Solanki

Crozier

2014

Applied Physics Letters

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Nanostructuring a material permits control over its interaction with light. Advanced methods for controlling the visible-to-infrared absorption spectra of semiconductor materials would present opportunities for photodetectors with engineered spectral response. Here, we experimentally demonstrate the fabrication of arrays of vertical Ge nanowires with different diameters. Measured reflection spectra show dip features for which electromagnetic simulations predict enhanced absorption. These can be shifted to longer wavelengths by increasing the diameters of the nanowires. We show that the reflectance dips broaden if the nanowires exhibit tapering. We furthermore show that observed ripple features in the dips are associated with longitudinal modes of the nanowires.

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confidence: 99%

Vertical germanium nanowires as spectrally-selective absorbers across the visible-to-infrared

Solanki

Crozier

2014

Applied Physics Letters

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“…The PIN detectors are low-current devices, however they do not have internal amplification. In order to form imagers, they are coupled with electrical low noise amplifiers called the read-out integrated circuits (ROIC) [2]. However, due to the lack of internal amplification in PIN detectors, even the lowest noise ROICs [3] have trouble retaining the signal-to-noise required with low-energy signals.…”

Section: Introductionmentioning

confidence: 99%

Short-wave infrared nano-injection imaging sensors

Memiş

Kohoutek

et al. 2010

2010 IEEE Sensors

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A novel nano-injection based imaging sensor is presented towards demanding applications in telecommunications, biophotonics, optical tomography, explosives detection and non-destructive material evaluation. The sensor can provide low noise levels concurrently with strong internal amplification, which results in a significant increase in the signal-to-noise levels compared to existing short-wave infrared imagers. The imager arrays are 320-by-256 pixels, with a pixel pitch of 30 µm. Post-hybridization, the imager test pixels shows internal amplification exceeding 2,000 electrons/photon with little excess noise (F~1.5) even at high amplification values. The imager shows a high signal to noise ratio at high frame rates and short integration times. Furthermore, the nano-injection imaging sensor shows significant sensitivity improvement over a high-end commercial short-wave infrared camera at similar settings, which highlights the benefits of implementing nanoinjection process in imaging sensors.

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“…For example, in contrast to some early 1.7 um cut-off HgCdTe imagers, InGaAs detectors with high, flat QE already exist. 5 A transparent InP substrate and substrate removal technology, such as that used to increase short wavelength performance and minimize cut-off wavelength non-uniformities and cosmic ray effects in HgCdTe, also exists. There is also a developing base for large format 2-D imager arrays for military and aerospace applications.…”

Section: Introductionmentioning

confidence: 99%

“…There is also a developing base for large format 2-D imager arrays for military and aerospace applications. 5,6 The larger commercial market for InGaAs also offers this imager technology the potential to be a lower cost, higher reliability alternative to HgCdTe. The work described herein provides data to assess the suitability of InGaAs technology for SNAP and determine its viability for other astronomy/scientific applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

et al. 2006

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We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.

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640x512 InGaAs focal plane array camera for visible and SWIR imaging

Cited by 45 publications

References 5 publications

Vertical germanium nanowires as spectrally-selective absorbers across the visible-to-infrared

Vertical germanium nanowires as spectrally-selective absorbers across the visible-to-infrared

Short-wave infrared nano-injection imaging sensors

Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

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