59.2: Highly‐Stable and Transparent Oxide TFTs for Rollable Displays

Mativenga, Mallory; Li, Xiulin; Um, Jumyung; Geng, Di; Jin, Seonghyun; Jang, Jin

doi:10.1002/sdtp.10377

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…The unique properties of oxide‐based semiconductors such as wide bandgap and high transparency also make novel applications possible. For example, a see‐through type transparent AMOLED can be realized using oxide‐based semiconductor . Using such types of displays, one can see the objects in the opposite side of the displays, and thus many interesting applications can be possible.…”

Section: Characterizationmentioning

confidence: 99%

Transparent AMOLED display driven by split oxide TFT backplane

et al. 2018

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We have developed stable and high performance etch-stopper amorphous indium-galliumzinc oxide thin-film transistor (TFT) by using split active oxide semiconductor. The amorphous indiumgallium-zinc oxide TFTs exhibit the mobility as high as over 70 cm 2 /Vs and the stable operation under positive bias temperature stress. In this work, we demonstrated a 4-in. transparent active-matrix organic light-emitting diode display using oxide TFT backplane with split active layer, where the gate driver is integrated.

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Section: Characterizationmentioning

confidence: 99%

Transparent AMOLED display driven by split oxide TFT backplane

et al. 2018

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“…Lin et al [8] co-sputtered IGZO and Al to form stable IGZAO TFTs [8]. Mativenga et al [9] prepared the rollable a-IGZO TFTs with good bias stability, good mechanical stability, and high operation frequency (~400 kHz) by using the solution-processed colorless-polyimide as the substrates [9].…”

Section: Introductionmentioning

confidence: 99%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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