53% wallplug efficiency 975 nm distributed feedback broad area laser

Kanskar, M.; He, Yabai; Cai, Jun; Galstad, C.; Macomber, S.H.; Stiers, E.; Botez, D.; Mawst, Luke J.

doi:10.1049/el:20062868

Cited by 26 publications

(6 citation statements)

References 3 publications

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“…A distributed Bragg reflector (DBR) monolithically integrated in the semiconductor diode chip is an attractive, potentially high-yield and low-cost, technology if compared with the more common hybrid coupling of volume Bragg gratings (VBG) to packaged high-power Fabry-Perot diode lasers [4]. Many demonstrations of high-power distributed feedback (DFB) and DBR diode lasers are reported in the literature [5][6][7][8]. VBG implies a considerable increase in the cost due to the need for additional components and their adjustment; moreover, it is limited by additional losses in the optical cavity, and intrinsic sensitivity to mechanical disturbances.…”

Section: Introductionmentioning

confidence: 99%

Wavelength-stabilized DBR high-power diode laser

et al. 2020

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This paper reports a wavelength-stabilized high-power diode laser emitting up to 14 W CW in the 9xx nm range. Wavelength stabilization is achieved by a distributed Bragg reflector (DBR) monolithically integrated in the diode laser chip. Key features are identical layer epitaxy (ILE) and the use of a multiple-order electron beam lithography (EBL) optical confining grating. ILE avoids any regrowth or complex technology processes, while EBL multiple-order grating allows narrow-band back reflection and effective lateral optical confinement, and makes it possible to stabilize multiple wavelengths on the same wafer using a manufacturable and reliable technology. DBR diode lasers with different pitches, whose wavelengths were 3 nm spaced, were fabricated and high spectral purity (95% optical power within about 0.6 nm) and wavelength stability were measured. Moreover, the high uniformity of performances across the wafer with different emitted wavelengths demonstrates the maturity of the proposed technology for high-yield, high-volume laser diode production for wavelength-stabilized applications. A multi-emitter module, including ten DBR diode lasers, collimating and focusing optics, showed 100 W CW wavelength-stabilized output power at 14 A in a 135 μm core optical fiber within 0.17 NA. Single diode lasers, or multi-emitter modules, can be used to combine high-power optical beams by wavelength division multiplexing (WDM) using dichroic optics, scaling up beam power to the kW range and maintaining optical beam quality.

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Section: Introductionmentioning

confidence: 99%

Wavelength-stabilized DBR high-power diode laser

et al. 2020

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“…We found that the rate of lasting output wavelength along with temperature variation is 0.062 nm/K. The rate is lower than 0.067 nm/K in [5]. The output wavelength has been locked; the Bragg wavelength and the output spectrum have been narrowed for a wide range of heat-sink temperatures.…”

Section: Resultsmentioning

confidence: 85%

The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

Guo

et al. 2015

Mathematical Problems in Engineering

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A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μm. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography method is adopted to make Bragg gratings in p-waveguide layer (Λ = 240 nm) of the GaAs epitaxial wafers. The best experimental conditions are determined by analyzing the surface morphology and three-dimensional holographic grating. In addition, the output power data and wavelength of the distributed feedback laser emitting at different temperatures are presented. And the wavelength varies with temperature at a rate of 0.062 nm/K. Finally, the conclusion is drawn that this kind of DFB laser has a better temperature stabilized wavelength and narrower line width.

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“…After epitaxial growth by MOCVD, the 4-μm-wide and 3-μm-long periodic island-like structures were fabricated by only i-line lithography on the areas of the wafer on which the ridge waveguides (RWs) will be fabricated. For a conventional DFB laser and a high-order Bragg grating laser, the index coupling coefficients is kL are greater than 1 [23], [24] and 0.3 [25], respectively. To reduce the index coupling effect induced by the periodic grooves of the island-like, we must design the index coupling coefficient to be small enough to be directly ignored.…”

Section: Structure and Fabricationmentioning

confidence: 99%

Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

Chen

Gao

et al. 2019

IEEE Photonics J.

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A narrow-strip single-longitudinal-mode gain-coupled distributed feedback semiconductor laser with a central wavelength of approximately 670 nm is demonstrated. We fabricate a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only. The maximum output power from the fiber of the device with butterfly package is 48.1 mW at 100 mA and its slope efficiency is 0.79 W/A. The laser can be continuously tuned from 670.750 to 670.784 nm with a sidemode suppression ratio of over 40 dB, covering the absorptive peak of lithium atoms. Our easily fabricated devices have great potential as light sources in many applications such as lithium atom detectors.

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53% wallplug efficiency 975 nm distributed feedback broad area laser

Cited by 26 publications

References 3 publications

Wavelength-stabilized DBR high-power diode laser

Wavelength-stabilized DBR high-power diode laser

The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

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