The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

Abstract

A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μm. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography method is adopted to make Bragg gratings in p-waveguide layer (Λ = 240 nm) of the GaAs epitaxial wafers. The best experimental conditions are determined by analyzing the surface morphology and three-dimensional holographic grating. In addition, the output power data and wavelength of the distributed feedback laser emitting at different temperatures are presented. And the wavelength varies with temperature at a rate of 0.062 nm/K. Finally, the conclusion is drawn that this kind of DFB laser has a better temperature stabilized wavelength and narrower line width.