52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide

Koezuka, Junichi; Okazaki, Kenichi; Hirohashi, Takuya; Takahashi, Masahiro; Adachi, Shunsuke; Tsubuku, Masashi; Yamazaki, Shunpei; Kanzaki, Yohsuke; Matsukizono, Hiroshi; Kaneko, Seiji; Mori, Shigeyasu; Matsuo, Takami

doi:10.1002/j.2168-0159.2013.tb06315.x

Cited by 35 publications

(26 citation statements)

References 10 publications

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“…Four curves indicated different sputtering condition. There was only one peak at 2θ ≈ 34°, which mean the TZO was C-axis aligned crystalline (CAAC) oxide semiconductor25. The FWHM was measured as 0.417° (O 2 /Ar = 10/90) and 0.396° (O 2 /Ar = 0/100) respectively, which indicated the grain sizes of the film.…”

Section: Resultsmentioning

confidence: 98%

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Han

Zhang

Cong

et al. 2016

Sci Rep

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In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

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Section: Resultsmentioning

confidence: 98%

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Han

Zhang

Cong

et al. 2016

Sci Rep

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“…Thus, channel-etched FETs are suitable for high-definition displays with slim borders. We have previously reported a channel-etched FET fabricated using a CAAC-OS [9] . By using channel-etched FETs for a backplane, a liquid crystal display (LCD) has a high aperture ratio, which results in low power consumption.…”

Section: Figure 1 Crystal Structures Of Os Thin Filmsmentioning

confidence: 99%

“…Although the formation of a single-crystal IGZO thin film requires annealing at temperatures of greater than or equal to 1000 C [3][4] , the formation of a CAAC-IGZO thin film over a glass substrate requires annealing at less than or equal to 500 C. We succeeded in forming a channel-etched OS field-effect transistor (FET) that uses CAAC-IGZO for an active layer and has improved characteristics and improved reliability by lowering the defect levels [5][6][7][8][9] .…”

Section: Figure 1 Crystal Structures Of Os Thin Filmsmentioning

confidence: 99%

33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

Akimoto

Shima

Jincho

et al. 2014

Symp Digest of Tech Papers

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“…We repeatedly pointed out the existence of CAAC in the past, 9,[11][12][13] and here we will compare a thin film of CAAC-IGZO with that of polycrystalline ZnO as an example. Figures 1(a) and 1(b) are plan-view transmission electron microscopy (TEM) images of a CAAC-IGZO thin film and a polycrystalline ZnO thin film, respectively.…”

Section: What Is Caac?mentioning

confidence: 99%

Properties of crystalline In–Ga–Zn-oxide semiconductor and its transistor characteristics

Yamazaki

Suzawa

Inoue

et al. 2014

Jpn. J. Appl. Phys.

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We report, in this paper, that crystalline In–Ga–Zn-oxide (IGZO) can be formed over an amorphous surface or over an uneven surface by a sputtering process at lower than 500 °C through the purification of IGZO. Crystalline IGZO, in which no clear grain boundary is observed, shows c-axis alignment but random a- and b-axis orientations without alignment. This crystal morphology differs from other morphologies that have been known thus far, such as single crystal and polycrystal morphologies. Our model for understanding the formation of this crystal morphology [c-axis-aligned crystal (CAAC)] is also discussed. Upon thermal annealing of a deposited film at lower than 500 °C, nanocrystal regions remaining in the CAAC can be converted into the CAAC structure. Accordingly, I off can be at the yA/µm (10−24 A/µm) level at 85 °C. It has been proven that by utilizing normally-off characteristics even with L/W = 40 nm/40 nm (actual size: L/W = 68 nm/34 nm), the fabrication of a three-dimensional (3D) LSI with a 3D oxide semiconductor/Si hybrid structure is feasible.

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52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide

Cited by 35 publications

References 10 publications

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

Properties of crystalline In–Ga–Zn-oxide semiconductor and its transistor characteristics

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