4H-SiC Trench MOSFET With L-Shaped Gate

Song, Qi; Shen, Yang; Tang, Guannan; Han, Chao; Zhang, Yimeng; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

doi:10.1109/led.2016.2533432

Cited by 53 publications

(20 citation statements)

References 9 publications

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“…Schottky barrier lowing model and tunnelling models are also involved in the simulations to characterise the SBD performances [17]. Related model parameters have been optimised and applied in previous simulation studies [3,18,19].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Liu

Tang

Song

et al. 2021

IET Power Electronics

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In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE-TCAD simulations. The proposed structure features an integrated Schottky barrier diode on one side-wall of the trench below the P-base region, and an inserted thicker oxide layer between the polysilicon gate and source metal on one side-wall of the trench. The simulation results show that compared with Infineon's CoolSiC™ Trench MOSFET, the proposed device decreases the gate charge Q g by 29.2%, leading to significantly improved figures of merit (R on,sp × Q g ). The reverse recovery charge Q rr and peak reverse recovery current (I RRM ) are reduced by 64.1% and 66.0%, respectively. Meanwhile, the total switching energy loss decreases 36.7% for the dynamic performance. How to cite this article: Liu S., et al.: A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

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Section: Device Structure and Simulation Setupmentioning

confidence: 99%

“…Silicon carbide devices are considered to be one of the most promising candidates for next-generation power semiconductor devices due to their excellent material properties [1][2][3]. Among them, SiC MOSFETs have received extensive attention because of their low on-state resistance and high thermal conductivity [1].…”

Section: Introductionmentioning

confidence: 99%

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Liu

Tang

Song

et al. 2021

IET Power Electronics

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“…Moreover, based on the existing literature, there are two domination ways used to improve the device’s performances. One is to adopt a new structure [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], with a mechanism that reduces the JFET resistance. The other is adopting a new fabrication process for the gate oxide [ 19 , 20 , 21 , 22 , 23 , 24 , 25 ], which increases the channel’s electron mobility to achieve a reduction in the resistance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

et al. 2022

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In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

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“…The

E_{ox - m}

should be typically <4 MV/cm when the device is in the blocking mode [2]. There have been efforts to address this problem by introducing novel designs such as L‐shaped gate [3], shielded fin‐shaped gate [4], non‐uniform doping floating islands [5], dual

P^{+}

shielding region at the trench bottom [6], and so on. Although trench MOSFETs have relatively low

R_{on} \times A

compared to the planar device due to the absence of JFET region, the resistance due to drift region

()(, R_{drift})

of the device is almost the same.…”

Section: Introductionmentioning

confidence: 99%

Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode

Kotamraju

Vudumula

2020

IET Circuits, Devices & Systems

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4H-SiC Trench MOSFET With L-Shaped Gate

Cited by 53 publications

References 9 publications

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode

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