4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Abstract

This paper compares the performance of 4H-SiC MOS capacitors and MOSFETs made using the conventional NO annealing process and a high-temperature (1400°C) dry oxidation process. Through extensive C-V, G-ω, I-V and Hall measurements, the limitations of both the processes are discussed.

Electrical characterization of trapping phenomena at SiO2 /SiC and SiO2 /GaN in MOS-based devices

“…The broadening of the G p / ω curve can be correlated with the surface potential fluctuations. The surface potential fluctuation ( η ) determined in our calculation are in good agreements with those reported by Naik and Chow in similar MOS capacitors . These surface fluctuations can be associated to the fluctuation on the lateral homogeneity of donors concentration in nitridated SiO 2 /4H‐SiC interfaces .…”

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

“…[6][7][8][9][10] Recent reports on high-temperature oxidation of 4H-SiC have shown that this process could be beneficial for the 4H-SiC/SiO 2 interface. [11][12][13][14] It has been reported 12 that as-grown 4H-SiC oxidized at 1500°C resulted in a 4H-SiC MOSFET with maximum field-effect mobility of 40 cm 2 /V s; here we investigate a similar effect for the 3C-SiC/SiO 2 interface. In this study, the highest temperature used for oxidation of 3C-SiC was 1400°C, because of the limit imposed by the melting point of Si (1414°C).…”

Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

“…4(a) shows the normalized parallel conductance (G p /ω) data for the sample oxidized at 1300 ℃. [11,12,14]. It is considered that the higher oxidation temperature can effectively reduce the accumulation of residual byproduct at the SiO 2 /SiC interface.…”

“…The work reported by Kikuchi et al showed a very low D it in a 14 nm oxide thickness sample by thermal oxidation at 1300 ℃ with O 2 annealing, in which the temperature window for the ideal reaction of SiC thermal oxidation in O 2 ambience with a standard atmospheric pressure was approximately estimated to be 1100~1400 ℃ [10,11]. Recently, higher oxidation temperature up to 1400 ℃ was also used to form the SiO 2 reported by Naik et al [12], however the results processed in 1400 ℃ were not as good as the expectation of better mobility at such higher oxidation temperature, and a channel mobility of corresponding MOSFETs was only 2 cm 2 /Vs. In this case, Ref.…”

“…The previous thermal oxidation processes for 4H-SiC were typically performed at the maximum operating temperature of 1200 ℃ in the common quartz furnace, so the oxidation at higher than 1200 ℃ becomes attractive. Recent reports on the high-temperature oxidations (> 1200 ℃) of 4H-SiC have shown that the density of interface states (D it ) can be decreased [9][10][11][12][13][14].…”