45nm CMOS technology with low temperature selective epitaxy of SiGe

Tamura, N.; Shimamune, Y.

doi:10.1016/j.apsusc.2008.02.162

Cited by 34 publications

(23 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with the present study, a larger maximum strain was indebted to the short channel length 36,37 and to a sigma-shaped S/D. 38 Also, F. Hue reported tensile strain in the Si channel region mapped with DFEH. 39 The above studies mainly used the DFEH method to analyze strain and compare it with NBD, which showed that DFEH and NBD are comparable and complementary.…”

Section: Resultsmentioning

confidence: 78%

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

et al. 2016

View full text Add to dashboard Cite

The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D) structure.

show abstract

Section: Resultsmentioning

confidence: 78%

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

et al. 2016

View full text Add to dashboard Cite

show abstract

“…This recess shape composed of (111) and (001) surface is the most favorable for pMOSFET application (see Fig. 23) [66].…”

Section: Relationship Between the Strain In Sige And Process Parametementioning

confidence: 99%

“…During the recent years, more complicated S/D designs e.g. sigma-shape S/D [66] were presented to increase the strain. This recess shape composed of (111) and (001) surface is the most favorable for pMOSFET application (see Fig.…”

Section: Relationship Between the Strain In Sige And Process Parametementioning

confidence: 99%

See 1 more Smart Citation

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

Radamson

Kolahdouz

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…Further strain could be induced when the shape of recessed S/D changed from a round shape to sigma (Σ) shape where the SiGe layers locate deeper in the channel region as shown in Figure 5 [41][42][43].…”

Section: Stress Engineeringmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

show abstract

45nm CMOS technology with low temperature selective epitaxy of SiGe

Cited by 34 publications

References 3 publications

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

The Challenges of Advanced CMOS Process from 2D to 3D

Contact Info

Product

Resources

About