400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers

Kaneko, Tetsuya; Tadauchi, Masaharu; Kita, Y.; Andoh, Hisashi

doi:10.1109/16.78383

Cited by 21 publications

(6 citation statements)

References 7 publications

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“…To meet these application requirements, active matrix addressed imaging arrays are implemented by integrating the photodiodes with the thin-film transistor (TFT) pixel switches in large area fabrication processes [24][25][26]. A combination of the hydrogenated amorphous silicon (a-Si:H) TFT and the a-Si:H photodiode has become the most well-developed technology solution for manufacturing commercial highresolution imagers [26].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging

Hou

Chen

Tang

et al. 2022

IEEE J. Electron Devices Soc.

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A facile blade-coating process is developed for large area deposition of uniform thick organic active layers in organic photodiodes (OPDs). Large-area semi-transparent top metal electrodes are thermally evaporated with an optimal deposition rate to achieve good balance between transparency and conductivity for top illumination integration structure with the organic thin-film transistor (OTFT) backplane. The maximum process temperature of the OPD is 85 ℃, so that the performance of the OTFT underneath is not affected. Based on the developed integration structure and processes, an all-organic integrated flexible active-matrix imager is developed, having the largest size (130 mm × 130 mm), highest resolution (1536 ×1536 pixels, 300 ppi) and lowest process temperature (100 ℃) reported so far for the OPD based imagers.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging

Hou

Chen

Tang

et al. 2022

IEEE J. Electron Devices Soc.

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“…Recently, polycrystalline silicon thin-film transistors (TFTs) have become attractive devices for active matrix liquid crystal displays (AMLCDs) [1][2][3][4][5], memory devices [6][7][8], photodetector amplifier [9], scanner [10][11], and linear image sensors [12][13][14]. Low temperature poly-Si TFT technology is drawing attention as potential a technology for building fullyintegrated AMLCDs system on glass [5,11,15].…”

Section: Introductionmentioning

confidence: 99%

A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope

Asthana

Goswami

Basak

et al. 2014

Semicond. Sci. Technol.

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In this paper, the characteristics of a novel device structure, uniformly doped ultra-deepsubmicron poly-Si barrier modulated thin film transistor (BM-TFT), are investigated and compared with conventional poly-Si TFT. Use of uniform doping provides a solution from problems associated with random dopant fluctuations. The suppression of the leakage current of the TFT by introducing barrier modulation is verified and presented. The device is optimized with respect to channel length, doping of channel, spacer dielectric and gate dielectric material. Simulations resulted in I OFF of ~2 × 10 −11 A μm −1 , I ON of ~2mA μm −1 , I ON /I OFF of 10 8 , subthreshold slope of 144 mV/dec and DIBL of 119 mV V −1 for PolyGate/HfO 2 /Poly-Si coplanar BM-TFT at temperature. of 300 K, gate length of 60 nm, oxide thickness of 5 nm, film thickness of 10 nm, low-k spacer thickness of 20 nm and V DD of 2.5 V.

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“…Recently polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have emerged as the device of choice for many applications with desirable electrical characteristics. These include, the integrating driver circuits and pixel transistors on the same glass panel, active matrix liquid crystal displays (AMLCDs) in notebook computers and high definition televisions (HDTVs), printer heads, scanners, synchronous random access memories (SRAMs), image sensors, high performance electrically erasable programmable read only memories (EEPROMs), three-dimensional large scale integrated (LSI) circuits and system-on-panel applications [1][2][3][4][5]. Also, a high-resolution activematrix microencapsulated electrophoretic display (EDP) driven by polycrystalline-silicon thin-film transistors (poly-Si TFTs) with integrated drivers have been developed [6].…”

Section: Introductionmentioning

confidence: 99%

Poly-crystalline Silicon Thin Film Transistor: a Two-dimensional Threshold Voltage Analysis using Green's Function Approach

Sehgal¹,

Mangla²,

Gupta³

et al. 2007

JSTS:Journal of Semiconductor Technology and Science

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A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon dioxide interface. The developed model gives insight into device behavior due to the effects of traps and grainboundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.

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400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers

Cited by 21 publications

References 7 publications

Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging

Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging

A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope

Poly-crystalline Silicon Thin Film Transistor: a Two-dimensional Threshold Voltage Analysis using Green's Function Approach

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