3D modeling of doping from the atmosphere in floating zone silicon crystal growth

Sabanskis, Andrejs; Surovovs, Kirils; Virbulis, J.

doi:10.1016/j.jcrysgro.2016.04.048

Cited by 13 publications

(3 citation statements)

References 17 publications

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“…Still, the amount of incorporated atoms is low, compared to values from modelling of a 4 inch process that predict a dopant efficiency of up to 95 % [12]. Reasons for these differences might be the evaporation of phosphorus due to the high partial pressure, but this is supposed to be rather low due to the high chemical affinity of phosphorus and silicon.…”

Section: N-type Doping With Phosphine (Ph3)mentioning

confidence: 88%

“…Another difference that might explain the deviations is the coil designs. A relatively small inductor hole compared to the simulated process in [12] might supress the gas flow next to the floating zone. The dopant concentration in the gas flowing along the melting surface in the area above the coil might be lowered, due to this reason.…”

Section: N-type Doping With Phosphine (Ph3)mentioning

confidence: 99%

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Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

Zobel

Mosel²,

Sørensen³

et al. 2018

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone technique is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.

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Section: N-type Doping With Phosphine (Ph3)mentioning

confidence: 88%

Section: N-type Doping With Phosphine (Ph3)mentioning

confidence: 99%

Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

Zobel

Mosel²,

Sørensen³

et al. 2018

IOP Conf. Ser.: Mater. Sci. Eng.

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“…However, the physical phenomena along the azimuthal direction cannot be analyzed with a 2D numerical model. Therefore, 3D numerical simulation results for the EM field, heat transfer, and impurities have been conducted [8][9][10][11][12]. The asymmetric three-phase line analysis by numerical simulation has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

et al. 2020

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A numerical simulation has been carried out to study the asymmetric heat transfer, fluid flow, and three-phase line to explain the phenomenon of the spillage of the melt in floating zone (FZ) silicon growth. A three-dimensional high-frequency electromagnetic (EM) field is coupled with the heat transfer in the melt and crystal calculation domains. The current density along the three-phase line is investigated to demonstrate the inhomogeneous heating along the three-phase line. The asymmetric heating is found to affect the flow pattern and temperature distribution of the melt. The three-dimensional solid-liquid interface results show that, below the current supplies, the interface is deflected due to strong heating below the current supplies. The calculated asymmetric three-phase line shows a similar trend as the experimentally observed results. The results indicate that the re-melting and spillage phenomenon could occur below the current supplies.

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3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han

Nakano

Harada

et al. 2018

Crystal Research and Technology

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In this paper, a three‐dimensional global heat transfer model to describe the floating zone of silicon single‐crystal growth is proposed. The steady‐state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid‐liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three‐dimensional current‐density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid‐liquid interface.

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3D modeling of doping from the atmosphere in floating zone silicon crystal growth

Cited by 13 publications

References 17 publications

Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

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