3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

Abstract

A numerical simulation has been carried out to study the asymmetric heat transfer, fluid flow, and three-phase line to explain the phenomenon of the spillage of the melt in floating zone (FZ) silicon growth. A three-dimensional high-frequency electromagnetic (EM) field is coupled with the heat transfer in the melt and crystal calculation domains. The current density along the three-phase line is investigated to demonstrate the inhomogeneous heating along the three-phase line. The asymmetric heating is found to affect the flow pattern and temperature distribution of the melt. The three-dimensional solid-liquid interface results show that, below the current supplies, the interface is deflected due to strong heating below the current supplies. The calculated asymmetric three-phase line shows a similar trend as the experimentally observed results. The results indicate that the re-melting and spillage phenomenon could occur below the current supplies.

Mixed Oscillation Flow of Binary Fluid with Minus One Capillary Ratio in the Czochralski Crystal Growth Model

“…With the rapid development of information technology, the electronics and optoelectronic materials have attracted much attention in various research fields. As important representatives of photoelectric functional materials, the supplement of synthetic crystals increases continuously, and the improvement on the functions and qualities of the crystals are required [1,2]. Among the crystal growth methods, the Czochralski (Cz) technique is one of the most important methods employed for crystal production [3,4].…”