In this paper, a three‐dimensional global heat transfer model to describe the floating zone of silicon single‐crystal growth is proposed. The steady‐state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid‐liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three‐dimensional current‐density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid‐liquid interface.
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