3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET

Sauveplane, Jean-Baptiste; Tounsi, P.; Scheid, E.; Deram, A.

doi:10.1016/j.microrel.2008.06.022

Cited by 17 publications

(5 citation statements)

References 8 publications

(8 reference statements)

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“…The objective was to simulate and map the temperature increase inside the device during an electrical pulse based on previous electrical simulations [18]. For a 90 A electrical pulse lasting 5.7 ms with a metallization in its initial state, a maximum temperature of 172°C was attained in the middle of the Al layer (Fig.…”

Section: Resultsmentioning

confidence: 99%

Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

Martineau

Mazeaud

Legros

et al. 2010

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 99%

Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

Martineau

Mazeaud

Legros

et al. 2010

Microelectronics Reliability

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“…3b,d). Typically, successive shortcircuits of several tens of microseconds induce temperature gradients on the order of 200°C [12].…”

Section: Al Metallization Outside Of the Bonding Areamentioning

confidence: 99%

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli

Berkani

Dupuy³

et al. 2017

Microelectronics Reliability

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The long-term reliability of power devices for applications in the automotive industry is limited by the electrothermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.Mechanisms of power module source metal degradation during electro-thermal aging.

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“…In the SJ TMOSFET equivalent resistance model (see Fig. 15) [12], [14], mesh resistance is caused by the source metal located at the uppermost area; the drift resistance at the SJ TMOSFET and resistance at the bonding is modeled as an array. Every node point at the resistor array located at the source metal (for a distributed resistance) is connected to the source (see Fig.…”

Section: Simulations and Analysesmentioning

confidence: 99%

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

Lho¹,

Yang²

2015

ETRI J

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For a conventional power metal–oxide–semiconductor field‐effect transistor (MOSFET), there is a trade‐off between specific on‐state resistance and breakdown voltage. To overcome this trade‐off, a super‐junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature‐sensing structures — diode and resistive. In this paper, a diode‐type temperature‐sensing structure for a TMOSFET is designed for a brushless direct current motor with on‐resistance of 96 mΩ·mm2. The temperature distribution for an ultra‐low on‐resistance power MOSFET has been analyzed for various bonding schemes. The multi‐bonding and stripe bonding cases show a maximum temperature that is lower than that for the single‐bonding case. It is shown that the metal resistance at the source area is non‐negligible and should therefore be considered depending on the application for current driving capability.

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3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET

Cited by 17 publications

References 8 publications

Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

Mechanisms of power module source metal degradation during electro-thermal aging

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

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