The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal‐oxide semiconductor field‐effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on‐resistance for two kinds of MOSFETs (200 V and 100 V of VDSS) are tested for γ‐irradiation and compared with the electrical specifications under the pre‐ and post‐irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the γ‐radiation facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.
Abstract:The specific on-resistance of non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOS-FET) is superior to that of uniform SJ TMOSFET under the same breakdown voltage. For the desired blocking voltage with 100-V, the electric field varies exponentially with distance between the drain and the source regions. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The doping concentration linearly decreases in the vertical direction from the N drift region at the bottom to the channel one at the upper. The structure modeling and the characteristic analyses for doping density, potential distribution, and electric field are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-resistance of 0.66 mΩ · cm 2 at the class of 100 V and 100 A is successfully optimized in the non-uniform SJ TMOSFET, which has the better performance than the uniform SJ TMOSFET in the specific on-resistance.
Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 mΩ-cm 2 at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.
This paper proposes a methodology to improve the transient stability (TS) of a system with wind energy generators. Induction machines are used widely as generators in the wind power plants. As these induction machines also have the stability problem like other synchronous machines, it is very important to analyze the TS of a system including the wind power plants. In this paper, the simulations and analysis of TS of power system including the induction generators during the short circuit fault conditions are carried out. The effect of pitch angle control on the stability of power system is analyzed. From the simulation results, it can be observed that the pitch control system which prevents the excess wind speed has the significant effect on the TS enhancement of the system. It can also be observed that the controller gain and time constant values have considerable effect on the pitch control system.
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