3D-convolution based fast transient thermal model for 3D integrated circuits: methodology and applications

Maggioni, F.; Oprins, Herman; Milojevic, Dragomir; Beyne, Eric; Wolf, Ingrid De; Baelmans, Martine

doi:10.1109/semi-therm.2015.7100148

Cited by 6 publications

(7 citation statements)

References 14 publications

(25 reference statements)

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“…It allows to compute highly resolved temperature profiles on the active layers of 3D-ICs using convolution and superposition. In our previous works [10], [11], where the basic methodology has been described, only the die stack was modeled. The package and the surrounding environment were considered by means of equivalent uniform convective BCs.…”

Section: Fast Transient Convolution Based Thermal Modeling Methodology For Including Thementioning

confidence: 99%

“…In the steady state regime, 2Dconvolution operations are performed between corresponding PMs and HSRs. The resulting temperature profiles referring to the same layer are then superposed to obtain the final response of the 3D-ICs to the applied PMs [10]. In the transient regime, also the temporal variation of PMs and HSRs needs to be considered.…”

Section: Basic Methodologymentioning

confidence: 99%

“…To this aim, the HSRs data, obtained for impulsive (i.e. one time step long) heat dissipation, are stored until steady state is reached and 3D-convolution (one temporal and two spatial variables) is used to compute the resulting time dependent temperature profiles [10].…”

Section: Basic Methodologymentioning

confidence: 99%

“…As presented in [10], the time dependent temperature profiles in transient regime for the stack configuration can be computed either by 3D-convolution or by 2D-convolution with subsequent time superposition. The related formulas are…”

Section: Package Correction In Transient Regimementioning

confidence: 99%

“…Actual devices work, indeed, in a dynamic thermal regime, with subsequently on-off switching of the cores. Considering steady state results might lead to opt for a more advanced and expensive cooling solution than is actually needed in real working conditions [10].…”

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Fast Transient Convolution-Based Thermal Modeling Methodology for Including the Package Thermal Impact in 3D ICs

Maggioni

Oprins

Beyne

et al. 2016

IEEE Trans. Compon., Packag. Manufact. Technol.

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The relevance of accurate prediction of the thermal behavior of microelectronic systems has been increasing since the introduction of 3D-ICs. Different modeling strategies have been implemented to this scope, aiming both to increase accuracy and to reduce computational time. In this paper, a transient fast thermal model methodology for packaged 3D stacked ICs is presented. It can be considered as a multi-scale strategy whose core is constituted by a highly resolved, convolution based algorithm. This allows to compute the temperature increase due to a generic, time varying, power map in a stack configuration. On top of this, the time dependent package thermal spreading and capacitive effect is included via correction profiles. These corrections are based on the ratio between the thermal responses of the package and of the stack configurations to uniform, impulsive, power dissipation at different time steps. Validation with respect to finite element method results shows good accuracy. An error metric, to estimate a priori the need to include the package impact on top of the convolution based approach, has also been developed. Alternative but similar algorithms, which place themselves in between the solutions with and without the package impact, both from an accuracy and from a computational time point of view, are also shortly presented in this work. Index Terms-Convolution, Electronic packaging thermal management, Fast thermal model. I. INTRODUCTIONIGH temperatures and high spatial and/or temporal temperature gradients represent a significant issue for the design and the fabrication of performant and reliable integrated circuits (ICs) [1]. Thermal issues are further exacerbated in 3D systems where active components are stacked on top of each other. These issues are not only due to the increased power density dissipated over the same area available for cooling, but also to the use of adhesives with low thermal conductivity for the vertical integration of the electronic components and to the reduced lateral spreading in the thinned Si chips.Accurate thermal analysis of 3D-ICs is, therefore, crucial to This paragraph of the first footnote will contain the date on which you submitted your paper for review.

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Section: Fast Transient Convolution Based Thermal Modeling Methodology For Including Thementioning

confidence: 99%

Section: Basic Methodologymentioning

confidence: 99%

Section: Basic Methodologymentioning

confidence: 99%

Section: Package Correction In Transient Regimementioning

confidence: 99%

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confidence: 99%

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