3D avalanche multiplication in Si-Ge lateral avalanche photodiodes

Jamil, Erum; Hayat, Majeed M.; Davids, Paul; Camacho, Ryan M.

doi:10.1117/12.2225037

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…Aforementioned Si-Ge APDs adopt vertical SACM structure, which requires to epitaxially grow an additional silicon charge layer. In order to reduce the device fabrication complexity, lateral SACM APDs have been demonstrated, in which the charge and multiplication regions are on one silicon layer [106][107][108][109]. Martinez et al proposed a lateral SACM APD with a breakdown voltage of more than 30 V and a GBP of 432 GHz as shown in Fig.…”

Section: Lateral Sacm Apdmentioning

confidence: 99%

High-speed Si-Ge avalanche photodiodes

Wang

2022

PhotoniX

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High-speed optical interconnects of data centers and high performance computers (HPC) have become the rapid development direction in the field of optical communication owing to the explosive growth of market demand. Currently, optical interconnect systems are moving towards higher capacity and integration. High-sensitivity receivers with avalanche photodiodes (APDs) are paid more attention due to the capability to enhance gain bandwidth. The impact ionization coefficient ratio is one crucial parameter for avalanche photodiode optimization, which significantly affects the excess noise and the gain bandwidth product (GBP). The development of silicon-germanium (Si-Ge) APDs are promising thanks to the low impact ionization coefficient ratio of silicon, the simple structure, and the CMOS compatible process. Separate absorption charge multiplication (SACM) structures are typically adopted in Si-Ge APDs to achieve high bandwidth and low noise. This paper reviews design and optimization in high-speed Si-Ge APDs, including advanced APD structures, APD modeling and APD receivers.

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Section: Lateral Sacm Apdmentioning

confidence: 99%

High-speed Si-Ge avalanche photodiodes

Wang

2022

PhotoniX

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“…As shown in Fig. 1, the LAPD is different from a conventional LAPD in structure, and no electrode is present in the Ge region [4,14] . Our structure also has a unique Si mesa in the Ge absorption region to modulate the field distribution in the device.…”

Section: Introductionmentioning

confidence: 99%

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

Zheng

et al. 2019

Tinshhua Sci. Technol.

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A novel lateral Ge=Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge=Si interface in the vertical direction. Modulating the Si mesa thickness (0 0:4 m) and impurity concentration of the intrinsic Si substrate (1 10 16 4 10 16 cm 3 ) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0:3 m, and the impurity concentration of the Si substrate is 2 10 16 cm 3 , the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1:55 m incident light power of 22:2 dBm, which increases with decreasing light intensity.

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Carrier trajectory tracking equations for Simple-band Monte Carlo simulation of avalanche multiplication processes

Ong

Charin

Leong

2017

Journal of Applied Physics

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Avalanche photodiodes (APDs) with steep electric field gradients generally have low excess noise that arises from carrier multiplication within the internal gain of the devices, and the Monte Carlo (MC) method is among popular device simulation tools for such devices. However, there are few articles relating to carrier trajectory modeling in MC models for such devices. In this work, a set of electric-field-gradient-dependent carrier trajectory tracking equations are developed and used to update the positions of carriers along the path during Simple-band Monte Carlo (SMC) simulations of APDs with non-uniform electric fields. The mean gain and excess noise results obtained from the SMC model employing these equations show good agreement with the results reported for a series of silicon diodes, including a p+n diode with steep electric field gradients. These results confirm the validity and demonstrate the feasibility of the trajectory tracking equations applied in SMC models for simulating mean gain and excess noise in APDs with non-uniform electric fields. Also, the simulation results of mean gain, excess noise, and carrier ionization positions obtained from the SMC model of this work agree well with those of the conventional SMC model employing the concept of a uniform electric field within a carrier free-flight. These results demonstrate that the electric field variation within a carrier free-flight has an insignificant effect on the predicted mean gain and excess noise results. Therefore, both the SMC model of this work and the conventional SMC model can be used to predict the mean gain and excess noise in APDs with highly non-uniform electric fields.

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3D avalanche multiplication in Si-Ge lateral avalanche photodiodes

Cited by 3 publications

References 11 publications

High-speed Si-Ge avalanche photodiodes

High-speed Si-Ge avalanche photodiodes

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

Carrier trajectory tracking equations for Simple-band Monte Carlo simulation of avalanche multiplication processes

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