Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

Abstract

A novel lateral Ge=Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge=Si interface in the vertical direction. Modulating the Si mesa thickness (0 0:4 m) and impurity concentration of the intrinsic Si substrate (1 10 16 4 10 16 cm 3 ) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0:3 m, and the impurity concentration of the Si substrate is 2 10 16 cm 3 , the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1:55 m incident light power of 22:2 dBm, which increases with decreasing light intensity.

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

“…For the SACM APD, the charge layer can restrict the electric field inside the Ge region and multiplication region to a reasonable level. On the contrary, for the proposed structure in this paper, such restriction is achieved by the dielectric constant difference between Si and Ge as well as the background doping inside the Ge layer [ 25 ].…”

High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR

“…Germanium (Ge) material, with its narrow band gap, has the potential for wide spectral detection applications. [3,4] In particular, Ge-based photonics, based on silicon, have been extensively utilized as key devices, including for optical communication and gas detection in the near-infrared region. This is because of the mature technology associated with Ge-based photonics and their compatibility with the well-established complementary metal-oxide semiconductor fabrication technology.…”