365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

Effect of Cavity Length and Operating Parameters on the Optical Performance of Al0.08In0.08Ga0.84N/ Al0.1In0.01Ga0.89N MQW Laser Diodes

“…Quaternary AlInGaN LDs with emission wavelengths less than 360 nm were also developed using Al and In content between 3% and 12% (Nagahama 2000; Nagahama S. 2001; Masui S. 2003; Michael K. 2003) [6,[8][9][10]. Wavelength "tunability" of the lasers was achieved for different Al and In compositions in the quaternary well, and, equally important, in the corresponding variations of the threshold current density J th .…”

“…Shingo et al reported Al 0.03 In 0.03 Ga 0.94 N UV LD under CW operation with emission wavelengths of 365 nm and a lifetime of 2000 h at an output power of 3 mW. They also achieved a short lasing wavelength of 354.7 nm under pulse current injection [8]. Michael et al demonstrated room-temperature (RT) pulsed operation of AlInGaN MQW LD emission between 362.4 and 359.9 nm.…”

“…(8). The DQE is dependent on the laser length L and the reflectivity of the mirror facets of laser, R 1 and R 2 , as shown in the equation below:…”

Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

“…Despite the material quality or fabrication problems, realizations of the ultraviolet laser diodes have been reported. 365-nm ultraviolet laser diodes using quaternary AlInGaN single-quantum-well structure were demonstrated under continuous wave (cw) operation at 25 C by Masui et al in 2003. The estimated lifetime of the 365 nm ultraviolet laser diodes was approximately 2000 h at an output power of 3 mW under cw operation at 30 C [10].…”

“…365-nm ultraviolet laser diodes using quaternary AlInGaN single-quantum-well structure were demonstrated under continuous wave (cw) operation at 25 C by Masui et al in 2003. The estimated lifetime of the 365 nm ultraviolet laser diodes was approximately 2000 h at an output power of 3 mW under cw operation at 30 C [10]. Kneissl et al also realized ultraviolet AlGaN multiple-quantum-well laser diodes with emission wavelengths between 359.7 and 361.6 nm in the same year [11].…”