320×240 Back-illuminated 10μm CAPD pixels for high speed modulation Time-of-Flight CMOS image sensor

Kato, Yuichi; Sano, Takuya; Moriyama, Yusuke; Maeda, Shunji; Yamazaki, Takeshi; Nose, Atsushi; Shina, Kimiyasu; Yasu, Yohtaro; Tempel, Ward Van Der; Ercan, Ali; Ebiko, Yoshiki

doi:10.23919/vlsic.2017.8008511

Cited by 21 publications

(20 citation statements)

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“…In order to expand the application areas of TOF imagers, improvements for depth resolution under aggressive conditions, such as longer distance and stronger ambient light, are necessary. Indirect TOF image sensors are classified into two types: a continuous-wave (CW) TOF method [1][2][3][4][5][6][7][8][9] and a short-pulse (SP) TOF method [10][11][12][13][14][15]. In CW-TOF imagers, the high depth resolution and longer distance measurements are simultaneously realized by using higher and multiple (2 or 3) modulation frequencies [5,8].…”

Section: Introductionmentioning

confidence: 99%

“…Indirect TOF image sensors are classified into two types: a continuous-wave (CW) TOF method [1][2][3][4][5][6][7][8][9] and a short-pulse (SP) TOF method [10][11][12][13][14][15]. In CW-TOF imagers, the high depth resolution and longer distance measurements are simultaneously realized by using higher and multiple (2 or 3) modulation frequencies [5,8]. On the other hand, in the SP-TOF method, the depth resolution is improved by making the gating-time width shorter, and the distance is extended by increasing the number of signal taps of the pixel and by using range-shifting techniques [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

Shirakawa

Yasutomi

Kagawa

et al. 2020

Sensors

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An 8-tap CMOS lock-in pixel image sensor that has seven carrier-capturing and a draining time window was developed for short-pulse time-of-flight (TOF) measurements. The proposed pixel for the short-pulse TOF measurements has seven consecutive time-gating windows, each of which has the width of 6 ns, which is advantageous for high-resolution range imaging, particularly for relatively longer distances (>5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depth-adaptive time-gating-number assignment (DATA) for the short-pulse TOF measurement is proposed. A prototype of the 8-tap CMOS lock-in pixel image sensor is implemented with a 1POLY 4METAL 0.11-μm CIS process. The maximum non-linearity error of 1.56%FS for the range of 1–6.4 m and the depth resolution of 6.4 mm was obtained at 6.2 m using the DATA technique.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

Shirakawa

Yasutomi

Kagawa

et al. 2020

Sensors

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“…It has been shown that through the aid of capturing the local angle of incidence and the intensity of light received, the whole 3D information of the recorded scene can be reconstructed. In order to provide solutions to this problem, numerous methods for 3D picture image capture have been proposed within the literature, including Time-of-Flight (ToF) [19,20], multi-apertures [21][22][23], Talbot's proposed within the literature, including Time-of-Flight (ToF) [19,20], multi-apertures [21][22][23], Talbot's diffraction pixels set [24][25][26], division of amplitude [27], division of focal plane microgrid (DoFP) with polarization pixel filters [24,[28][29][30] and quadrature pixels [9,25,26]. Disadvantages of the previous techniques include additional laser source and time to process the laser signal in ToF, a large amount of micro-lens that require a very large imager array in the case of multi-apertures image sensors, and a large number of pixels to decode angle variations that involves non-trivial post-processing in the case of Talbot's pixels.…”

Section: Introductionmentioning

confidence: 99%

Angular Light, Polarization and Stokes Parameters Information in a Hybrid Image Sensor with Division of Focal Plane

Carvalho

Cruz

Marques

et al. 2020

Sensors

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Targeting 3D image reconstruction and depth sensing, a desirable feature for complementary metal oxide semiconductor (CMOS) image sensors is the ability to detect local light incident angle and the light polarization. In the last years, advances in the CMOS technologies have enabled dedicated circuits to determine these parameters in an image sensor. However, due to the great number of pixels required in a cluster to enable such functionality, implementing such features in regular CMOS imagers is still not viable. The current state-of-the-art solutions require eight pixels in a cluster to detect local light intensity, incident angle and polarization. The technique to detect local incident angle is widely exploited in the literature, and the authors have shown in previous works that it is possible to perform the job with a cluster of only four pixels. In this work, the authors explore three novelties: a mean to determine three of four Stokes parameters, the new paradigm in polarization cluster-pixel design, and the extended ability to detect both the local light angle and intensity. The features of the proposed pixel cluster are demonstrated through simulation program with integrated circuit emphasis (SPICE) of the regular Quadrature Pixel Cluster and Polarization Pixel Cluster models, the results of which are compliant with experimental results presented in the literature.

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“…For this reason, the system requires two-dimensional scanning, leading to higher cost and limited frame rate. The other candidate is indirect ToF sensors based on lock-in pixels [3][4][5], which is suitable for increasing the pixel count, and plenty of ToF sensors have been reported. Using indirect ToF sensors, the scanning system can be simplified to one dimension, and the resulting speed and spatial resolution can be increased.…”

Section: Introductionmentioning

confidence: 99%

A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

Lee¹,

Yasutomi²,

Nam³

et al. 2018

Eurosensors 2018

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A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-oninsulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m 2 @30 m.

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320×240 Back-illuminated 10μm CAPD pixels for high speed modulation Time-of-Flight CMOS image sensor

Cited by 21 publications

References 1 publication

An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

Angular Light, Polarization and Stokes Parameters Information in a Hybrid Image Sensor with Division of Focal Plane

A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

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