31 Mp and 39 Mp full-frame CCD image sensors with improved charge capacity and angle response

Abstract

This paper describes the design and performance of two new high-resolution full-frame architecture CCD imaging devices for use in professional color, digital still-imaging applications. These devices are made using 6.8 µm pixels and contain a dual-split HCCD register with two outputs to increase frame rate. The KODAK KAF-31600 Image Sensor (31 Mp) is designed with microlenses to maximize sensitivity, whereas the KODAK KAF-39000 Image Sensor (39 Mp) is designed without microlenses to maximize incident light-angle response. Of particular interest is the implementation of an under-the-field oxide (UFOX) lateral overflow drain (LOD) and thin light shield process technologies. The new UFOX LOD structure forms the LOD under the thick-field oxide that eliminates a breakdown condition, allowing much higher LOD doping levels to be used. The net result is that the LOD may be scaled to smaller dimensions, thereby enabling larger charge capacities without compromising blooming control. The thin light shield process utilizes only the TiW portion of the TiW/Al metal bilayer to form the pixel aperture. This reduces the overall stack height that helps improve angle response (for pixels using microlenses) or critical crosstalk angles (for pixels without microlenses).

Increased space-bandwidth product in pixel super-resolved lensfree on-chip microscopy

“…3.d is also in agreement with the literature that reports the architecture of this sensor-array3839. The KAF 39MP CCD image sensor has two gate electrodes for each pixel; one is built using Indium Tin Oxide (ITO), while the other gate electrode is built from doped Polysilicon.…”