The outdiffusion profiles of oxygen in Czochralski Si(111) within the temperature range 700–1160 °C and for three processing conditions (nitrogen atmosphere, steam oxidation, and phosphorus indiffusion) were measured by secondary ion mass spectrometry. The diffusivity and solubility of oxygen in Si were determined by fitting these profiles to a simple diffusion model. Oxygen diffusivity shows little or no dependence on processing conditions and can be expressed as D=0.14 exp(−2.53 eV/kT) cm2 s−1 for the temperature range studied. Our observations show that point defects in Si have little effect on oxygen diffusion and demonstrate that oxygen diffuses primarily via an interstitial mechanism. Oxygen solubility was the largest during steam oxidation.
The effects of intentional metal contamination on silicon charge-coupled device imagers are reported. Such imagers are both sensitive to and provide sensitive measures of the presence of metals in the fabrication process. High-purity iron, cobalt, nickel, copper, palladium, and gold were deliberately introduced into the device wafers just before the last high temperature step. Metals were found to cause both electrical defects and distinctive imaging defects.We find that transition metals can be effectively removed from device regions by internal gettering, but that this gettering can be defeated by a fast cool-down. Gold, however, is poorly gettered.
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