30–40-GHz Drain-Pumped Passive-Mixer MMIC Fabricated on VLSI SOI CMOS Technology

Ellinger, Frank; Rodoni, L.; Sialm, G.; Kromer, C.; Buren, G. von; Schmatz, M.; Menolfi, Christian; Toifl, Thomas; Morf, T.; Kossel, Marcel; Jäckel, H.

doi:10.1109/tmtt.2004.827004

Cited by 62 publications

(24 citation statements)

References 17 publications

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“…As power consumption is an important constraint in the RF NoCs, passive components are privileged when possible, for instance for the mixers. F. Ellinger, et al [20] proposed a drain-pumped passive mixer in the 30-40 GHz range. None of these works perfectly fit our needs.…”

Section: A Analog Transmitter Front Endmentioning

confidence: 99%

See 1 more Smart Citation

Flexible Radio Interface for NoC RF-Interconnect

Drillet¹,

Hamieh²,

Zerioul³

et al. 2014

2014 17th Euromicro Conference on Digital System Design

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International audience— This paper introduces flexible radio techniques inside integrated circuits in order to tackle the interconnect issue for many-core chips. We propose to take benefits from OFDMA for a RF-interconnect associated to a carrier allocation policy and adaptive modulation. A 20 GHz bandwidth is shared between 32 tilesets made of 32 tiles of 4 cores each, for a 4096 cores chip. We adopt a cognitive radio approach in order to dynamically share 1024 carriers, which avoids inter-cluster communication contention and decreases latency compared to conventional static approaches

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Section: A Analog Transmitter Front Endmentioning

confidence: 99%

“…As it is integrated on a network on chip, the transceiver power and area consumption must be sufficiently small compared to the whole system one. The mixers are designed with non-polarized MOSFETs [20] [21]. Thus, there is no power consumption in the mixers.…”

Section: A Analog Transmitter Front Endmentioning

confidence: 99%

Flexible Radio Interface for NoC RF-Interconnect

Drillet¹,

Hamieh²,

Zerioul³

et al. 2014

2014 17th Euromicro Conference on Digital System Design

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“…To achieve a wide locking range, the fundamental component of transconductance g m (t) is a key parameter because the conversion gain of the mixer usually relies on it. As RF signal applied to the gate, this injection transistor M inj can be considered as an active drainpumped mixer owing to the zero dc voltage of V DS [12], and the fundamental component g m(1) (t) of g m (t) can be derived by Fourier series, yielding (1) ,max…”

Section: Principles Of Transconductance Mixersmentioning

confidence: 99%

An 85-GHz injection-locked frequency divider with current-reuse pre-amplifier technique

Chu

Wang

2011

IEEE Asian Solid-State Circuits Conference 2011

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In this paper, the design of an 85-GHz injection-locked frequency divider (ILFD) with a current-reuse pre-amplifier is presented. Utilizing a current-reuse pre-amplifier can efficiently increase the input frequency locking range without extra power consumption. The divider is implemented in 90-nm CMOS technology for W-band (75 to 110 GHz) applications. The core area is 0.31×0.21 mm 2 , and the measured operation range is 78 ~ 90.6 GHz. The center frequency is 85 GHz and the locking range is 14.8%. The power is 2.33 mW excluding buffers from a 1.2 V supply voltage.

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“…The transistors M 5 and M 6 using NMOS/PMOS pair are connected to be a differential direct injector the in back-toback type, where the transistors can be treated as a switch [6]. By tuning the controlled voltage, V c1 , biased at the gate-ends of M 5 and M 6 can increase the injection efficiency and lead to a wider locking range, because the transistors M 5 and M 6 become the drain-pumped passive mixers [7]. Furthermore, an open-collect CML output buffer is used to drive the 50 Ω load from the instrument.…”

Section: Hybrid Differential Injection-locked Frequency Divider Cmentioning

confidence: 99%

A low-power CMOS injection-locked frequency divider based on hybrid differential injection technique

Huang

Tsai

Chang

et al. 2009

2009 Asia Pacific Microwave Conference

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An injection-locked frequency divider (ILFD) designed for Ka-band millimeter-wave applications has been implemented in 0.18 µm CMOS process with a wide locking range and a low power consumption. Based on the circuit topology of the differential injection with combining the tailand the direct injectors, the locking range can efficiently be enhanced. Comparing with the conventional ILFD circuits only using the tail-or the direct injection, the proposed ILFD exhibits a flat output power performance with a power consumption of 1.8 mW from a 1.8 V supply at 30 GHz. The measured maximum locking range is about 8.9 GHz ranging from 25.6 GHz to 34 GHz when the injection power level is 4 dBm. The locking range having a 3-dB power rolloff at outputs can also be achieved to 8 GHz ranging from 25.5 GHz to 33.5 GHz.Index Terms -CMOS, injection locking, frequency divider, wide locking range.

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30–40-GHz Drain-Pumped Passive-Mixer MMIC Fabricated on VLSI SOI CMOS Technology

Cited by 62 publications

References 17 publications

Flexible Radio Interface for NoC RF-Interconnect

Flexible Radio Interface for NoC RF-Interconnect

An 85-GHz injection-locked frequency divider with current-reuse pre-amplifier technique

A low-power CMOS injection-locked frequency divider based on hybrid differential injection technique

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