2010 IEEE Radar Conference 2010
DOI: 10.1109/radar.2010.5494534
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3 GS/s S-Band 10 Bit ADC on SiGeC Technology

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Cited by 5 publications
(2 citation statements)
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“…Though we lose the advantage of low-rate ADCs in this approach, we still have the advantage that the signal processing unit only needs to operate at a fairly low rate. Since the signal processing capability is a limiting factor, whereas ADCs with baud rates of up to 3 giga-samples [12], [13] are available, this approach might be quite practicable.…”
Section: ∈ℤmentioning
confidence: 99%
“…Though we lose the advantage of low-rate ADCs in this approach, we still have the advantage that the signal processing unit only needs to operate at a fairly low rate. Since the signal processing capability is a limiting factor, whereas ADCs with baud rates of up to 3 giga-samples [12], [13] are available, this approach might be quite practicable.…”
Section: ∈ℤmentioning
confidence: 99%
“…It is fabricated in the 0.35 µm SiGe BiCMOS technology. The analog circuits are implemented with SiGe hetero-junction bipolar transistors (HBTs) due to their advantages of high speed, low 1/f noise, low mismatch and high reliability [3]. In order to improve the ADC performance, a replica-biased reference ladder is devised and a modified topology of resistor interpolation is proposed.…”
Section: Introductionmentioning
confidence: 99%