3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

“…Then, in spite of its double-gate configuration, JL-DGFET should be more sensitive to radiation than IM-DGFET for which the channel is intrinsic. The transient response of IM-DGFET devices under heavy-ion irradiation has been studied by 3-D numerical simulation in [22][23][24][25]. These previous studies demonstrated that IM-DGFET shows a better resistance to radiation than FDSOI, due to the enhanced control of the film potential by the two connected gates which reduces floating-body effects.…”

Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates

“…The highest LET value is offered by the common double gate FinFET-based structure and the lowest LET value is offered by the Flex-V TH structure. The transient response to heavy ion irradiation of common double gate FinFET and independent double gate FinFET (as isolated devices not as a SRAM cell) are studied in [15] and the independent double gate FinFET shows a degraded radiation performance due to higher bipolar amplification. This is reflected in our 6T-SRAM simulations also.…”

Modeling Single Event Transients in Advanced Devices and ICs

“…For the 24-nm UT SOI transistor, it is interesting to note that the SET with the highest amplitude is located in the gate. The change in term of location must be due to the stronger bipolar amplification for more integrated device, especially in the middle of the gate [49], [81], [83]. On the other hand, a lot small amplitude SETs are generated even if the ion strike is located far from the UT SOI transistor (blue and dark blue points) showing that energy deposited by -rays far from the ion track core is enough to generate significant SETs.…”

“…Some analytical models have been developed and are based on two main mechanisms: first, the model uses the equivalent access resistances of each transistor considering drain/source characteristics deduced from GDS extraction, with the aim to determine the triggering of the bipolar transistor. Second, the model takes into account the variability of the amplification of charge collection as a function of LET due to the SOI FinFET technology or novel architecture such as the Double-gate or Tri-gate transistors [83].…”