2D MoSe₂ Structures Prepared by Atomic Layer Deposition

Abstract

Here, we demonstrate the preparation of 2D MoSe2 structures by the atomic layer deposition technique. In this work, we use ((CH3)3Si)2Se as the Se precursor and Mo(CO)6 or MoCl5 as the Mo precursors. The X‐ray photoelectron spectroscopy (XPS) analyses of the prepared samples have revealed that using the MoCl5 precursor the obtained structure of MoSe2 is nearly identical to the reference powder MoSe2 sample while the composition of the sample prepared from Mo(CO)6 contains a significant amount of oxygen atoms. Further inspection of as‐deposited samples via scanning electron microscopy (SEM), X‐ray diffraction (XRD), and Raman spectroscopy has disclosed that the MoSe2 structure based on MoCl5 is formed from randomly oriented well crystalline flakes with their size ≈100 nm in contrast to the Mo–Se–O compact film originating from Mo(CO)6.

Cyclic Silylselenides: Convenient Selenium Precursors for Atomic Layer Deposition

“…Bis(trialkylsilyl)selenides (R 3 Si−Se−SiR 3 ) were introduced in 2009 and were demonstrated as suitable selenium precursors for deposition of various metal selenides. Variation of the R‐substituent allowed tailoring volatility and reactivity towards metal halides often used in ALD and provide repeatable results . However, linear bis(trialkylsilyl)selenides are generally prone to quick hydrolysis and oxidation and their handling is less comfortable.…”

“…Variation of the Rsubstituent allowed tailoring volatility and reactivity towards metal halides often used in ALD and provide repeatable results. [17][18][19] However, linear bis(trialkylsilyl)selenides are generally prone to quick hydrolysis and oxidation and their handling is less comfortable. Hence, we report herein cyclic silylselenides 1-3 that preparation is outlined in Scheme 1.…”

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

“…Mo(CO) 6 + Se(SiMe 3 ) 2 167 1-10 nm films (amorp.) PEC, PC 2018 [230,231] MoCl 5 + Se(SiMe 3 ) 2 300 >10 nm rough films (50-100 nm) ? nm rough films (cryst.)…”

Unravelling the Origin of Enhanced Electrochemical Performance in CoSe2−MoSe2 Interfaces

“…Peaks at 55.9 eV and 56.7 eV corresponds to the spin orbit components of MoÀ SeÀ O bonds. [42] These surface oxidized species highlight the presence of V Se and/or undercoordinated Mo atoms due to the introduction of CoSe 2 . We further quantified % V Se in CoSe 2 À MoSe 2 /PEDOT from the elemental atomic ratios, while normalizing pristine MoSe 2 to 2.…”