2D electronics - opportunities and limitations

Geng, Zhansong; Kinberger, W.; Granzner, Ralf; Pezoldt, Joerg; Schwierz, Frank

doi:10.1109/essderc.2016.7599628

Cited by 6 publications

(5 citation statements)

References 42 publications

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“…We also calculated the drain‐induced barrier lowering and found a competitive DIBL performance for GNR MOSFETs. For example, for a N = 16 ac GNR MOSFET with 20 nm gate length the simulated DIBL is 62 mV/V compared to 110 mV/V and 120 mV/V for experimental state‐of‐art single‐gate Si bulk and SOI MOSFETs with the same gate length, while for a 20‐nm gate UTB SOI MOSFET a DIBL around 60 mV/dec, i.e. comparable to that of the 20‐nm gate GNR MOSFET, has been obtained.…”

Section: Gnr Mosfetsmentioning

confidence: 85%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Section: Gnr Mosfetsmentioning

confidence: 85%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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“…Furthermore, the heavy electron effective mass in 2D materials could also reduce the source-drain tunneling in ultrashort MOS FETs. Another advantage is that flexible electronic circuits could be easily achieved by 2D material-based electronics . However, there are still many difficulties in the construction of large-scale homogeneous 2D materials for complicated ICs.…”

Section: Circuits Based On 2d Materialsmentioning

confidence: 99%

“…However, there are still many difficulties in the construction of large-scale homogeneous 2D materials for complicated ICs. The contacts are also problems, referring to the contact resistances between the source or the drain terminals and the 2D material channels . New constructions of 2D material-based ICs still need to be developed, as well as novel detecting strategies, such as ptychographic X-ray computed tomography (PXCT), which could directly but nondestructively detect the inside structures of electronic circuits …”

Section: Circuits Based On 2d Materialsmentioning

confidence: 99%

“…Another advantage is that flexible electronic circuits could be easily achieved by 2D material-based electronics. 660 However, there are still many difficulties in the construction of large-scale homogeneous 2D materials for complicated ICs. The contacts are also problems, referring to the contact resistances between the source or the drain terminals and the 2D material channels.…”

Section: Chemical Reviewsmentioning

confidence: 99%

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Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

et al. 2018

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Two-dimensional (2D) materials have attracted tremendous research interest since the breakthrough of graphene. Their unique optical, electronic, and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. Their atomic thickness and exposed huge surface even make them highly designable and manipulable, leading to the extensive application potentials. What's more, after acquiring the qualification for being the candidate for next-generation devices, the assembly of 2D materials monomers into mass or ordered structure is also of great importance, which will determine their ultimate industrialization. By designing the monomers and regulating their assembling behavior, the exploration of 2D materials toward the next-generation circuits can be spectacularly achieved. In this review, we will first overview the emerging 2D materials and then offer a clear guideline of varied physical and chemical strategies for tuning their properties. Furthermore, assembly strategies of 2D materials will also be included. Finally, challenges and outlooks in this promising field are featured on the basis of its current progress.

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“…T WO-dimentional (2D) materials (e.g. graphene and transition metal dichalcogenides) represent a very promising option for the post-silicon era in Radio-Frequency (RF) electronics [1], [2], [3], [4], [5]. Indeed, the improved electrostatic control and the large carrier mobility offered by these materials may boost the RF performance of ultimately scaled devices.…”

Section: Introductionmentioning

confidence: 99%

On the Adequacy of the Transmission Line Model to Describe the Graphene–Metal Contact Resistance

Venica

Driussi

Gahoi

et al. 2018

IEEE Trans. Electron Devices

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The contact-end-resistance method is applied to TLM structures to characterize in-depth the graphene-metal contact and its dependence on the back-gate bias. Parameters describing the graphene-metal stack resistance are extracted through the widely used transmission line model. The results show inconsistencies which highlight application limits of the model underlying the extraction method. These limits are attributed to the additional resistance associated to the p-p + junction located at the contact edge, that is not part of the conventional transmission line model. Useful guidelines for a correct application of the extraction technique are provided, identifying the bias range in which this additional resistance is negligible. Finally, the contact-end-resistance method and the transmission line model are exploited to characterize graphenemetal contacts featuring different metals.

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2D electronics - opportunities and limitations

Cited by 6 publications

References 42 publications

Graphene Nanoribbons for Electronic Devices

Graphene Nanoribbons for Electronic Devices

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

On the Adequacy of the Transmission Line Model to Describe the Graphene–Metal Contact Resistance

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