Dopant radial inhomogeneity in Mg-doped GaN nanowires

Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Éric; Jouneau, Pierre‐Henri; Garro, N.; Cros, A.; Daudin, B.

doi:10.1088/1361-6528/aabbd6

Cited by 20 publications

(28 citation statements)

References 41 publications

(62 reference statements)

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“…However, in absence of In, the amount of incorporated Mg atoms in AlN NWs was negligible, which was assigned to both the size of Mg and its tendency to segregate on the surface, similar to what is found in the case of GaN layers [80]. In absence of In co-doping when growing the upper AlN NW section in the present case, it can be concluded that the enhanced lateral nucleation probability responsible for the formation of the AlN nanotubes is indeed associated with the surface segregation of Mg. Studies on the Mg doping of GaN NWs have put in evidence a preferential Mg incorporation through the sidewalls, due to the stabilization of a Mg-H reconstruction on the m-plane [81,82]. The present data indeed suggest that a similar mechanism could be effective in the case of AlN, with the consequence of stabilizing the Mg-rich outer layer of AlN and enhancing the sidewall nucleation probability.…”

Section: Growth Of Aln Nanotubessupporting

confidence: 67%

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

et al. 2020

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The spontaneous growth of GaN nanowires in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the nanowire top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN 2 nanowires. In the case of AlN nanowires, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes. I.

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Section: Growth Of Aln Nanotubessupporting

confidence: 67%

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

et al. 2020

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Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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“…However, this is not necessarily the case for NWs. As a matter of fact, it has been found that GaN NWs obeyed a specific doping regime, with a Si solubility limit higher than in layers 25 and an incorporation mechanism of Mg favouring its accumulation in NWs periphery 9,26 . Indeed in the case of InN NWs, first principle calculation have demonstrated that the formation energy of substitutional Mg is lowered close to the surface, which has been assigned to an eased elastic strain relaxation related to the large amount of free surface in NWs 27 .…”

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Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

et al. 2019

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Efficient, mercury-free deep ultraviolet (DUV) light emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p -doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN NWs.Optimal electrical activation of acceptor impurities has been further achieved by electron irradiation, resulting in tunnel conduction through the AlN NW p-n junction. The proposed theoretical scenario to account for enhanced Mg incorporation involves an easy ionization of In-

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Dopant radial inhomogeneity in Mg-doped GaN nanowires

Cited by 20 publications

References 41 publications

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Synthesis and Applications of III–V Nanowires

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

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