Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

Siladie, Alexandra-Madalina; Jacopin, Gwenolé; Cros, A.; Garro, N.; Robin, Éric; Caliste, Damien; Pochet, Pascal; Donatini, Fabrice; Pernot, Julien; Daudin, B.

doi:10.1021/acs.nanolett.9b01394

Cited by 27 publications

(37 citation statements)

References 34 publications

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“…The choice of the central energy of 4.722 eV comes directly from the AlN-1200 CL spectrum (Fig. S6 in Supplementary Information), which cannot be associated with AlN near band edge (NBE) expected to be > 6 eV, but with defects emission from AlN [85,86]. In turn, 3.404 eV corresponds to the NBE emission from GaN NW template.…”

Section: Above Bandgap Excitation Of Alxga1-xn-1200 (X > 0)mentioning

confidence: 99%

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Cardoso

Jacopin

Faye

et al. 2021

Applied Materials Today

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In this work, Eu 3+ -implanted and annealed AlxGa1-xN (0 ≤ x ≤ 1) nanowires (NWs) grown on GaN NW template on Si (111) substrates by plasma-assisted molecular beam epitaxy are studied by µ-Raman, cathodoluminescence (CL), nano-CL, and temperature-dependent steady-state photoluminescence. The preferential location of the Eu 3+ -implanted ions is found to be at the AlxGa1-xN top-section. The recovery of the as-grown crystalline properties is achieved after rapid thermal annealing (RTA). After RTA, the red emission of the Eu 3+ ions is attained for all the samples with below and above bandgap excitation. The 5 D0 → 7 F2 transition is the most intense one, experiencing a redshift with increasing AlN nominal content (x) from GaN to AlN NWs. Moreover, AlN nominal content and annealing temperature alters its spectral shape suggesting the presence of at least two distinct optically active Eu 3+ centers (Eu1 and Eu2). Thermal quenching of the Eu 3+ ion luminescence intensity, I, is found for all the samples from 14 K to 300 K, being the emission of Eu 3+ -implanted AlN NWs after RTA at 1200 ℃ the most stable (I300 K/I14 K ~80%). The GaN/AlN interface in this sample is also found to have a key role in the Eu 3+ optical activation.

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Section: Above Bandgap Excitation Of Alxga1-xn-1200 (X > 0)mentioning

confidence: 99%

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Cardoso

Jacopin

Faye

et al. 2021

Applied Materials Today

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“…[150,151] Moreover, due to the enhanced surface doping, the doping concentration in AlGaN nanowires can be improved. [152][153][154] Therefore, the MBE-grown AlGaN nanowires may solve some of the fundamental material challenges in the development of AlGaN DUV lasers. In addition, the in situ formation of the MBE-grown AlGaN nanowires on various foreign substrates, including flexible metals, can enable flexible DUV photonic devices.…”

Section: Algan Nanowires Grown By Pambementioning

confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

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“…Dislocation‐free semiconductor nanostructures not only enhance the performance and functionality of electronic, photonic, and quantum devices and systems, but also open a new paradigm for controlling the formation of defects and impurity incorporation. [ 19–24 ] During the epitaxy of N‐polar AlN nanostructures, N‐rich conditions are commonly used. [ 3,22,25 ] Illustrated in Figure 1c, the formation energy of N‐vacancy related defects can be increased by nearly 3 eV under N‐rich epitaxy condition, compared to conventional N‐poor condition, thereby suppressing N‐vacancy related defect formation.…”

Section: Figurementioning

confidence: 99%

“…impurity incorporation. [19][20][21][22][23][24] During the epitaxy of N-polar AlN nanostructures, N-rich conditions are commonly used. [3,22,25] Illustrated in Figure 1c, the formation energy of N-vacancy related defects can be increased by nearly 3 eV under N-rich epitaxy condition, compared to conventional N-poor condition, thereby suppressing N-vacancy related defect formation.…”

mentioning

confidence: 99%

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

Laleyan

Deng

et al. 2020

Adv Elect Materials

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Ultrawide‐bandgap semiconductors such as AlN, BN, and diamond hold tremendous promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency electronics, but their practical application has been limited by poor current conduction. Through a combined theoretical and experimental study, it is shown that a critical challenge can be addressed for AlN nanostructures by using N‐rich epitaxy. Under N‐rich conditions, the p‐type Al‐substitutional Mg‐dopant formation energy is significantly reduced by 2 eV, whereas the formation energy for N‐vacancy related compensating defects is increased by ≈3 eV, both of which are essential to achieve high hole concentrations of AlN. Detailed analysis of the current−voltage characteristics of AlN p‐i‐n diodes suggests that current conduction is dominated by hole‐carrier tunneling at room temperature, which is directly related to the activation energy of Mg dopants. At high Mg concentrations, the dispersion of Mg acceptor energy levels leads to drastically reduced activation energy for a portion of Mg dopants, evidenced by the small tunneling energy of 67 meV, which explains the efficient current conduction and the very small turn‐on voltage (≈5 V) for the diodes made of nanoscale AlN. This work shows that nanostructures can overcome the dopability challenges of ultrawide‐bandgap semiconductors and significantly increase the efficiency of devices.

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Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

Cited by 27 publications

References 34 publications

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

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