Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Chen, Kai-Huang; Tsai, Tsung‐Ming; Cheng, Chien-Min; Huang, Shou-Jen; Chang, Kuan‐Chang; Liang, Shu-Ping; Young, Tai‐Fa

doi:10.3390/ma11010043

Cited by 28 publications

(13 citation statements)

References 15 publications

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“…To calculate the

−

curve, the Schottky conduction mechanism equation was transformed to the I-V curves fitting the RRAM devices. For the hopping conduction,

where d, Φ T , v 0 , N and a are film thickness, barrier height of hopping, intrinsic vibration frequency, the density of space charge, and mean hopping distance, respectively [ 13 , 14 , 15 , 16 ].…”

Section: Resultsmentioning

confidence: 99%

“…For the LRS and HRS states, the slope value of the Schottky emission conduction in the I–V curves of the RRAM devices was calculated as 7.5 and 2.85, respectively. The reciprocal slope value was calculated for the Schottky emission distance value, and the intercept was calculated for the barrier height value of the Schottky conduction equation [ 13 , 14 , 15 , 16 ].…”

Section: Resultsmentioning

confidence: 99%

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First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

et al. 2023

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In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated.

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“…To calculate the

−

curve, the Schottky conduction mechanism equation was transformed to the I-V curves fitting the RRAM devices. For the hopping conduction,

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

et al. 2023

Self Cite

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“…Many different conduction models have been proposed for the HRS, including Schottky emission [41,42,43,44], trap-assisted tunneling [45,46,47], Poole–Frenkel conduction [43,48], space-charge limited current [49,50,51,52], thermally activated hopping [53,54], and the Quantum Point Contact model (QPC) [55,56,57,58,59,60,61], among others. Specifically, the QPC model can provide a smooth transition from tunneling in the HRS to Ohmic conduction in the LRS for several kinds of RS devices [58,59,60,61].…”

Section: Resultsmentioning

confidence: 99%

Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors

Lian

Shen

et al. 2019

Micromachines

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Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with a Weibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes.

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“…The electronic activation energy barrier equation (Ea) and the hopping conduction distance (∆z) extraction were observed [20].…”

Section: Resultsmentioning

confidence: 99%

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

Lin

Chen

2019

Crystals

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: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.

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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Cited by 28 publications

References 15 publications

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

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