: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.
In this study we first present the preference structures in decision making as a generalized non-linear function. Then, we incorporate it into a fuzzy linear inequality of which the progressive and conservative manners are described by the concept of target hyperplanes. Thus, one's preference domain is said to be bounded by such soft constraint. When facing different situations, a membership function is defined as an evaluation function for incorporating one's optimistic or pessimistic attitude into this soft constraint. Once a goal is pursued, the problem is transformed into a symmetric fuzzy linear program. Based on max-min principle, an auxiliary crisp model in the form of a generalized fractional program is derived. Then, Dinkelbach-type-2 and the bisection algorithms are adopted for solution. Finally their simulation results of an uncertain production scheduling problem are reported.
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