Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

doi:10.1038/s41467-017-02093-z

Cited by 394 publications

(339 citation statements)

References 69 publications

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“…Photodetectors based on direct‐CVD‐grown heterojunctions have been demonstrated . By direct vapor‐phase growth, Li et al fabricated epitaxial vertical SnS 2 /MoS 2 heterostructures with a sharp interface and type‐II band alignment with an extremely large band offset.…”

Section: Strategies For Enhancing the Performance Of Photodetectorsmentioning

confidence: 99%

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

et al. 2018

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Graphene and graphene‐like 2D layered materials such as black phosphorus, transition‐metal dichalcogenides, oxides, chalcogenides, and so forth have attracted tremendous attention due to their unique crystal structures, mechanical, and physical properties, as well as their variable bandgaps that range from 0 to 6 eV, which have offered their utilization in versatile devices. Using these materials as the active channel, many novel electrical and optoelectronic devices have been reported. Among the various important devices applications, photodetectors based on 2D materials have been extensively investigated with varied performance due to the different species and detection mechanisms. Here, the methods to improve the performance of 2D‐material‐based photodetectors are reviewed. There are five kinds of strategies regarding methods, including surface plasmon enhancement, charge‐transfer assistance, optical‐waveguide integration, graphene sandwiched structures, and heterostructures directly grown by CVD, which are developed and widely reported in recent years. For each method, the device design, performance, and mechanism are introduced and discussed systematically. Finally, a summary is provided to afford the principle to further enhance the performance of photodetectors based on 2D materials, with a perspective for their practical applications in the future.

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Section: Strategies For Enhancing the Performance Of Photodetectorsmentioning

confidence: 99%

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

et al. 2018

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“…The vertically stacked hetero-structure has been successfully synthesized by a layer-by-layer epitaxial [87], and laterally stacked hetero-structure synthesis method though single-step CVD approaches have also been reported recently (examples illustrated in Figure 4a- Figure 4b, c and d, the domain size is much larger than that of the previously mentioned one-step approach [82]. Similar approaches have been used to grow SnS2/WSe2 heterojunction (Figure 4f,g) [85]. Compared to the manually stacked heterojunctions, the CVD epitaxial method can be evolved into a promising application in optoelectronics devices with a high-quality hetero-structure.…”

Section: Heterojunctionmentioning

confidence: 73%

“…It is possible to control epitaxial orientation with different growth temperatures and as shown in Figure 4b, c and d, the domain size is much larger than that of the previously mentioned one-step approach [82]. Similar approaches have been used to grow SnS 2 /WSe 2 heterojunction (Figure 4f,g) [85]. Compared to the manually stacked heterojunctions, the CVD epitaxial method can be evolved into a promising application in optoelectronics devices with a high-quality hetero-structure.…”

Section: Heterojunctionmentioning

confidence: 97%

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Sun¹,

Xu²,

Zhang³

et al. 2018

Crystals

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Two-dimensional (2D) semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal-oxide-semiconductor (CMOS) devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs), and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

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Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…Optimizing the performance of PDs by heterojunction is an effective method. For example, PDs are constructed using directly grown vertical double‐layer WSe 2 /SnS 2 p‐n structures (Figure D) This parallel‐series mode device exhibits significant changes compared with the original structure (Table ). This van der Waals heterostructure can further adjust the electrical and optical properties of the device by coupling between layers …”

Section: Promising Applications Of Low‐dimensional Semiconductor Matementioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

120

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Cited by 394 publications

References 69 publications

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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