2018
DOI: 10.1016/j.ultramic.2017.10.012
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Material interface detection based on secondary electron images for focused ion beam machining

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Cited by 7 publications
(1 citation statement)
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“…Ga ions are used in FIB microscopy for their low melting point and vaporising pressure characteristics, as well as having a momentum transfer of 30 keV which is usually found in heavier ions [50]. A more technologically advanced FIB is incorporated with SEM and used as a dual system, though more on FIB-TEM and FIB-SEM will be explained in the following sections [51].…”
Section: Focused Ion Beam (Fib) Microscopymentioning
confidence: 99%
“…Ga ions are used in FIB microscopy for their low melting point and vaporising pressure characteristics, as well as having a momentum transfer of 30 keV which is usually found in heavier ions [50]. A more technologically advanced FIB is incorporated with SEM and used as a dual system, though more on FIB-TEM and FIB-SEM will be explained in the following sections [51].…”
Section: Focused Ion Beam (Fib) Microscopymentioning
confidence: 99%