Modeling the Performance Limitations and Prospects of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions

Futscher, Moritz H.; Ehrler, Bruno

doi:10.1021/acsenergylett.7b00596

Cited by 93 publications

(90 citation statements)

References 56 publications

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“…The p-n homo-junction on the front is formed by highly-doped boron diffusion. With regards to the top perovskite cell structure, although theoretically a band gap near 1.7 eV has been recommended in the absence of any optical loss, 29,30 parasitic absorption of short wavelengths exists in the hole transport materials (HTM) commonly used in state of the art solar cells 4,7,9,16,31 such as poly[bis(4-phenyl)(2,5,6-trimethylphenyl)]amine (PTAA), 4,9 and 2,2 0 ,7,7 0 -tetrakis(N,N-di-pmethoxyphenylamine)-9,9-spirobifluorene (spiro-OMeTAD). 4,31 Parasitic absorption of short wavelength light also exists in the ITO/MoO 3 stack, which is also the most commonly used transparent conductive stack for the top of the semi-transparent perovskite in a tandem.…”

Section: Approachmentioning

confidence: 99%

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Zheng

Lau

Mehrvarz

et al. 2018

Energy Environ. Sci.

195

186

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aMonolithic perovskite/silicon tandem solar cells show great promise for further efficiency enhancement for current silicon photovoltaic technology. In general, an interface (tunnelling or recombination) layer is usually required for electrical contact between the top and the bottom cells, which incurs higher fabrication costs and parasitic absorption. Most of the monolithic perovskite/Si tandem cells demonstrated use a hetero-junction silicon (Si) solar cell as the bottom cell, on small areas only. This work is the first to successfully integrate a low temperature processed (r150 1C) planar CH 3 NH 3 PbI 3 perovskite solar cell on a homo-junction silicon solar cell to achieve a monolithic tandem without the use of an additional interface layer on large areas (4 and 16 cm 2 ).Solution processed SnO 2 has been effective in providing dual functions in the monolithic tandem, serving as an ETL for the perovskite cell and as a recombination contact with the n-type silicon homo-junction solar cell that has a boron doped p-type (p++) front emitter. The SnO 2 /p++ Si interface is characterised in this work and the dominant transport mechanism is simulated using Sentaurus technology computer-aided design (TCAD) modelling. The champion device on 4 cm 2 achieves a power conversion efficiency (PCE) of 21.0% under reverse-scanning with a V OC of 1.68 V, a J SC of 16.1 mA cm À2 and a high FF of 78% yielding a steady-state efficiency of 20.5%. As our monolithic tandem device does not rely on the SnO 2 for lateral conduction, which is managed by the p++ emitter, up scaling to large areas becomes relatively straightforward. On a large area of 16 cm 2 , a reverse scan PCE of 17.6% and a steady-state PCE of 17.1% are achieved. To our knowledge, these are the most efficient perovskite/homo-junction-silicon tandem solar cells that are larger than 1 cm 2 . Most importantly, our results demonstrate for the first time that monolithic perovskite/silicon tandem solar cells can be achieved with excellent performance without the need for an additional interface layer. This work is relevant to the commercialisation of efficient large-area perovskite/homo-junction silicon tandem solar cells. Broader contextA simple approach for integrating a perovskite solar cell monolithically onto a Si solar cell is reported here. The first advantage of this approach is that it does not require additional fabrication of an additional interface layer between the perovskite and Si cell. The second advantage of this approach is that it is compatible with a homo-junction p-n Si solar cell, which is a common Si solar cell structure for commercial cells. The third advantage is that the entire sequence for the planar perovskite cell fabrication is done at low temperatures, minimising damage to the bottom Si solar cell. The fourth advantage is that the SnO 2 electron transport layer of the perovskite top cell also serves as a recombination contact with the silicon bottom cell. Finally, this monolithic tandem approach does not rely on the SnO 2 for lateral conducti...

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Section: Approachmentioning

confidence: 99%

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Zheng

Lau

Mehrvarz

et al. 2018

Energy Environ. Sci.

195

186

View full text Add to dashboard Cite

show abstract

“…While the first reports are promising, it is not yet clear whether a 2-terminal design can outperform the best single junction in reality. 28,33,34 Thus, a more relevant energy yield analysis is necessary that includes light trapping, especially for diffuse incident light or oblique illumination in the morning or late afternoon.…”

Section: Introductionmentioning

confidence: 99%

Textured interfaces in monolithic perovskite/silicon tandem solar cells: advanced light management for improved efficiency and energy yield

Jost

Köhnen

Morales-Vilches

et al. 2018

Energy Environ. Sci.

308

269

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“…[ 1–3 ] The high power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) combined with the ability to engineer the bandgap make this class of materials an excellent candidate for the wide‐bandgap top absorber layer in low‐cost tandem solar cells. [ 4–7 ] Simulations promise PCEs of >33% when combining wide‐bandgap PSCs with established low‐bandgap photovoltaic technologies such as crystalline silicon (c‐Si) or copper indium gallium diselenide (CIGS) in a tandem configuration, [ 8–14 ] which is well above even the theoretical efficiency limit of market‐dominating single‐junction c‐Si solar cells (29.6%), [ 15 ] promising to further reduce the levelized cost of electricity of photovoltaics. [ 16 ]…”

Section: Introductionmentioning

confidence: 99%

2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS

Gharibzadeh

Hossain

Faßl

et al. 2020

Adv Funct Materials

137

122

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Wide-bandgap perovskite solar cells (PSCs) with optimal bandgap (E g ) and high power conversion efficiency (PCE) are key to high-performance perovskite-based tandem photovoltaics. A 2D/3D perovskite heterostructure passivation is employed for double-cation wide-bandgap PSCs with engineered bandgap (1.65 eV ≤ E g ≤ 1.85 eV), which results in improved stabilized PCEs and a strong enhancement in open-circuit voltages of around 45 mV compared to reference devices for all investigated bandgaps. Making use of this strategy, semitransparent PSCs with engineered bandgap are developed, which show stabilized PCEs of up to 25.7% and 25.0% in fourterminal perovskite/c-Si and perovskite/CIGS tandem solar cells, respectively. Moreover, comparable tandem PCEs are observed for a broad range of perovskite bandgaps. For the first time, the robustness of the four-terminal tandem configuration with respect to variations in the perovskite bandgap for two state-of-the-art bottom solar cells is experimentally validated.

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Modeling the Performance Limitations and Prospects of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions

Cited by 93 publications

References 56 publications

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Textured interfaces in monolithic perovskite/silicon tandem solar cells: advanced light management for improved efficiency and energy yield

2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS

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