Correction: Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)_1−x(ZnO)_x solid solution

Abstract

Correction for 'Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)(ZnO) solid solution' by Aimin Wu et al., Dalton Trans., 2017, 46, 2643-2652.

Atomic arrangement matters: band-gap variation in composition-tunable (Ga1–xZnx)(N1–xOx) nanowires

“…The nanowires grew in an argon-ammonia (Ar-NH 3 ) carrier gas mixture when the temperature of the quartz boat loaded with the GaN, Ga 2 O 3 , and ZnO mixture reached 1,140 C and that of the substrate reached ~840 C (Figure 1A). In this process, commercially available powder reagents are used as precursors without lengthy pretreatment, [41][42][43][44] and the nanowire growth is complete in 20 min, in contrast to the procedure duration of hours or even days of solid-state nitridation reactions reported in the literature. 26,29,36,44 Moreover, the chemical composition can be continuously tuned simply by varying the component proportions of GaN, Ga 2 O 3 , and ZnO in the precursor mixture without changing any other experimental parameter, ensuring the growth of (Ga 1-x Zn x )(N 1-x O x ) nanowires with complete composition tunability under identical reaction conditions.…”