High-performance and broadband photodetection of bicrystalline (GaN)1-(ZnO)  solid solution nanowires via crystal defect engineering

Ma, Z.Y.; Li, Gang; Zhang, Xinglai; Li, Jing; Zhang, Cai; Ma, Yonghui; Zhang, Jian; Usoltseva, Natalia; An, Vladimir; Liu, Baodan

doi:10.1016/j.jmst.2021.01.020

Cited by 10 publications

(2 citation statements)

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“…In addition, the InGaN NR based PD exhibits a weak photoresponse in the wavelength range of 450 to 650 nm due to the existence of defect states whose defect level serves as carrier transition energy level. 30 To further analyze the dependence of photocurrent and light power density, the time-dependent photocurrent under different light power densities from 70 μW/cm 2 to 15.5 mW/cm 2 and zero bias are shown in Figure 3f. The relationship of transient photocurrent and pulse light power density is shown in Figure S9, and the fitting factor is calculated to be 0.79, and the change of the power-law dependence indicates a complex recombination process of carriers through trap states.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the InGaN NR/PEDOT:PSS PD and InGaN NR/PEDOT:PSS@Ag NW PD exhibit a higher responsivity in the ultraviolet region, and the main reason is that the PEDOT:PSS material increases ultraviolet absorption as demonstrated by the absorption spectrum (Figure c). In addition, the InGaN NR based PD exhibits a weak photoresponse in the wavelength range of 450 to 650 nm due to the existence of defect states whose defect level serves as carrier transition energy level . To further analyze the dependence of photocurrent and light power density, the time-dependent photocurrent under different light power densities from 70 μW/cm 2 to 15.5 mW/cm 2 and zero bias are shown in Figure f.…”

Section: Resultsmentioning

confidence: 99%

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High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Chen,

Xie,

Lan

et al. 2024

ACS Appl. Mater. Interfaces

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InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 μs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%