28.4: A Silver gate a‐Si TFT with buffer layers for Large‐Area AMLCDs

Abstract

We demonstrated a silver gate hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) using thin buffer layers of alumina(Al 2 O 3 ) and aluminum-nitride(AlN). An Al 2 O 3 layer on glass substrate was deposited so as to increase adhesion between APC(> 98 wt% silver) and glass substate. An AlN layer on APC was deposited to prevent it from plasma damage during siliconnitride(SiNx) deposition. The Ag gate a-Si:H TFT with these buffer layers exhibited a field-effect mobility of 1.15 cm 2 /Vs, a gate voltage swing of 0.86 V/dec. and a threshold voltage of 2.5 V.

Performance of Low Resistivity Electrode Prepared by Electroless Plated for Amorphous Silicon Thin-Film Transistors

“…Silver thin film can provide lower resistivity than Cu or Al. Therefore, Ag is studied as a candidate for low resistivity electrode of TFTs [2]. Silver thin films have been prepared by using PVD [2][3][4], electro-beam evaporation [5], thermal evaporation, electroplating and electroless plating, etc.…”

“…Therefore, Ag is studied as a candidate for low resistivity electrode of TFTs [2]. Silver thin films have been prepared by using PVD [2][3][4], electro-beam evaporation [5], thermal evaporation, electroplating and electroless plating, etc. Electroless plating technique is one of the important wet processes which have been popularly used for (printed circuit board) PCB and VLSI applications.…”

“…S.W. Lee et al [2] selected Ag-Pd-Cu (APC) alloy as gate electrode of a-Si TFT for Large-area AMLCDs. The APC thin film was deposited by RF magnetron sputter.…”

A novel patterning method of low-resistivity metals

“…[1][2][3][4][5] Conventional metal-patterning methods require high temperature and vacuum apparatuses. They essentially involve the steps of forming patterns using photoresists and etching for removing the undesired metal.…”