2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 2014
DOI: 10.1109/isscc.2014.6757518
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28.2 A 0.29mm<sup>2</sup> frequency synthesizer in 40nm CMOS with 0.19ps<inf>rms</inf> jitter and &#x003C;-100dBc reference spur for 802.11ac

Abstract: Conventional analog PLLs do not scale well with process when compared to alldigital PLLs due to several substantial building blocks such as the loop filter and charge pump (CP). To achieve the required phase noise, the in-band noise is typically suppressed by increasing CP current and loop filter size, while the outof-band noise is reduced by improving VCO tank Q; both lead to increased die area. This paper presents a fractional-N synthesizer targeting the relatively stringent phase noise requirement to suppor… Show more

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Cited by 15 publications
(9 citation statements)
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“…The reference doubler technique is adopted to double the 26-52 MHz. The duty cycle issue is calibrated by using the method in [21]. A time amplifier (TA) [22] is used to improve the coarse TDC resolution from 20-2.5 ps.…”
Section: B Wide Loop-bandwidth Fractional-n Dpllmentioning
confidence: 99%
“…The reference doubler technique is adopted to double the 26-52 MHz. The duty cycle issue is calibrated by using the method in [21]. A time amplifier (TA) [22] is used to improve the coarse TDC resolution from 20-2.5 ps.…”
Section: B Wide Loop-bandwidth Fractional-n Dpllmentioning
confidence: 99%
“…To improve the in-band phase noise, a 4b 2-ps-resolution TA-TDC [7] and a reference doubler are implemented. The duty cycle issue of the doubler [15] is calibrated by using the method proposed in [16]. The proposed 10b isolated constant-slope DTC enhances the FOM of the fractional-N ADPLL, thanks to the good linearity and power efficiency.…”
Section: Sub-mw Fractional-n Adpll Architecturementioning
confidence: 99%
“…N EGATIVE voltage supply has been traditionally employed to implement low-voltage source-side erase operation in flash-EEPROM memories [1], [2], and biasing of III-V depletion mode devices for circuits such as Gallium Nitride (GaN) based RF power amplifier [3]- [5]. In recent times, the potential of negative voltage input has been explored for several upcoming applications, such as biphasic tissue stimulation [6], [7], static-leakage reduction [8] and high-performance oscillators [9], [10]. In Fig.…”
Section: Introductionmentioning
confidence: 99%