Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy

Mag-usara, Valynn Katrine; Funkner, Stefan; Niehues, Gudrun; Prieto, Elizabeth Ann; Balgos, Maria Herminia; Somintac, Armando; Estacio, Elmer; Yamamoto, Kohji; Hase, Muneaki; Tani, Masahiko

doi:10.1364/oe.24.026175

Cited by 17 publications

(9 citation statements)

References 24 publications

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“…In the case of the sample grown at 325°C, it is followed by a second component that can be fitted with an exponential decay, yielding lifetimes in the range of the picosecond. This increase of the lifetime with the growth temperature, and hence the decrease of the antisite concentration, is in agreement with the literature [47][48][49][50]. Due to the similarity of the lifetime found in the LTG layers with the ones given in the literature for LTG binary compounds, we believe that the majority of the point defects in the bulk have the physical characteristics of the antisites.…”

Section: Atomic-scale Identification Of the Point Defectssupporting

confidence: 91%

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Demonchaux

Sossoe

Dzagli

et al. 2018

Phys. Rev. Materials

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While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we investigate lowtemperature-grown dilute GaAs 1−x P x alloys. High concentrations of negatively charged point defects are found. Combined with transmission electron microscopy and pump-probe transient reflectivity, this study shows that the defects have a behavior similar to the group-V antisites. Further analyses with x-ray diffraction point to the preferential incorporation of arsenic antisites, consistent with ab initio calculations, that yield a formation energy 0.83 eV lower than for phosphorus antisites. Although the negative charge carried by the arsenic antisites in the STM images is shown to be induced by the proximity of the STM tip, the arsenic antisites are not randomly distributed in the alloy, providing insight into the evolution of their charge state during the growth.

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Section: Atomic-scale Identification Of the Point Defectssupporting

confidence: 91%

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Demonchaux

Sossoe

Dzagli

et al. 2018

Phys. Rev. Materials

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“…This description potentially provides another physical mechanism consistent with the need in literature to fit surface charge decay rates with two different time constants in experiments based on THz emission spectroscopy 41 , e.g. when emitted by surge currents 19 . In fact, such an experiment could face a similar decay trend as in our OPRE case.…”

Section: Resultssupporting

confidence: 70%

“…Mag-Usara et al . proposed the “double optical pump” THz time-domain emission spectroscopy, which maps the carrier lifetimes by observing variation in the surge-current generated THz electric field when varying the delay between a THz generating pump and a second optical screening pump 19 .…”

Section: Introductionmentioning

confidence: 99%

Optical Pump Rectification Emission: Route to Terahertz Free-Standing Surface Potential Diagnostics

Peters

Tunesi

Pasquazi

et al. 2017

Sci Rep

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We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz surface generation. In our scheme, that we name Optical Pump Rectification Emission, a THz field is generated directly on the surface via surface optical rectification of an ultrashort pulse after which the DC surface potential is screened with a second optical pump pulse. As the THz generation directly relates to the surface potential arising from the surface states, we can then observe the temporal dynamics of the static surface field induced by the screening effect of the photo-carriers. Such an approach is potentially insensitive to bulk carrier dynamics and does not require special illumination geometries.

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“…Speaking about the unbiased THz emitters, there is a greater variety of materials for samples. Optical reflection and DPP THz methods were compared in an article [8] where both of them were used for the investigation of LT-GaAs layers grown at different temperatures. While using the DPP THz method for the investigation of CuInSe 2 it was shown for the first time that the pump pulse could increase the THz emission efficiency [9].…”

Section: Introductionmentioning

confidence: 99%

Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

Beleckaitė¹,

Burakauskas²,

Adomavičius³

2018

physics

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In this study we report the investigation of terahertz (THz) emission efficiency dynamics in p-type InAs using a double-pump-pulse (DPP) THz emission method. We also suggest a novel modification of the standard DPP method which allows us to measure the indirectly modulated THz pulse. The obtained results reveal that the first optical pulse increases the free carrier concentration and enhances the surface electric field. This field prevents perpendicular but improves parallel to the surface electric dipole formation after sample excitation with the second optical pulse. Our suggested method is shown to be a more precise and sensitive way to study electric fields and photocarrier dynamics in semiconductors after photoexcitation.

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Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy

Cited by 17 publications

References 24 publications

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Optical Pump Rectification Emission: Route to Terahertz Free-Standing Surface Potential Diagnostics

Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

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