Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

Beleckaitė, Ieva; Burakauskas, Lukas; Adomavičius, R.

doi:10.3952/physics.v58i1.3657

Cited by 2 publications

(2 citation statements)

References 20 publications

(22 reference statements)

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“…In the literature, there are several reports of photocarrier lifetime measurements in GaAs [35,54], InAs [35,55], InP [ 35,56], GaAsSb [57], GaInNAs [58], and GaPAsN [59] using OPTP. The photocarrier lifetime ranges from 1 to 5 ps in GaAs to 200-660 ps in InAs to∼1.4 ns in InP NWs [35].…”

Section: Resultsmentioning

confidence: 99%

Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Yuan¹,

Pokharel²,

Devkota³

et al. 2022

Nanotechnology

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Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. Recently, it was found that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~ 2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.

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Section: Resultsmentioning

confidence: 99%

Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Yuan¹,

Pokharel²,

Devkota³

et al. 2022

Nanotechnology

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“…In this study, the pulse generator employing the AsSe 2 core MOF based MZI device is shown to have some potential applications, e.g. the measurement of indirectly modulated terahertz (THz) pulse [25] and harmonic generation [26].…”

Section: Introductionmentioning

confidence: 99%

Generation of single and double pulses using a symmetrical Mach–Zehnder interferometer employing microstructured chalcogenide fibres: numerical analysis

Jin¹,

Yang²,

Wu³

2019

physics

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In this numerical work, a Mach–Zehnder interferometer device with sample and reference arms composed of microstructured chalcogenide optical fibres with AsSe2 core and As2S5 cladding is presented to generate single and double pulses. An unchirped hyperbolic secant-shaped pulse with enough high peak power centered at 1958 nm wavelength and a continuous wave with a very weak power level at 2070 nm wavelength are simultaneously introduced into the sample arm, in which stimulated Raman scattering and strong cross-phase modulation induced by two co-propagating waves give rise to a significant phase shift for a continuous wave. In the reference arm, the continuous wave directly passes through the fibre, where the transmitted wave has a slight phase shift due to the influence of self-phase modulation. Therefore, at the output port of the configuration, the re-combined optical fields at 2070 nm wavelength have a significant phase difference. As a result, both single and double pulses caused by the optical interference at the output port are achieved by judiciously adjusting the phase difference which is mainly controlled by the peak power and temporal width of the input optical pulse, as well as the length of a microstructured optical fibre. In addition, both widths of the single pulse and spacing of the double pulses are directly dependent on the temporal width of the input pulse and the fibre length of the arm.

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Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

Cited by 2 publications

References 20 publications

Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Generation of single and double pulses using a symmetrical Mach–Zehnder interferometer employing microstructured chalcogenide fibres: numerical analysis

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