2017
DOI: 10.1038/s41598-017-08734-z
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Optical Pump Rectification Emission: Route to Terahertz Free-Standing Surface Potential Diagnostics

Abstract: We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz surface generation. In our scheme, that we name Optical Pump Rectification Emission, a THz field is generated directly on the surface via surface optical rectification of an ultrashort pulse after which the DC surface potential is screened with a second optical pump pulse. As the THz generation directly relates to the surface potential arising from the surface states, we can then observe the temporal dynamics of… Show more

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Cited by 21 publications
(6 citation statements)
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References 41 publications
(34 reference statements)
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“…3(a)) are very similar for both emitters, despite the differences in the terahertz generation mechanisms. According to our experimentally measured azimuthal dependence of the terahertz radiation amplitude, terahertz emission from InAs can be mainly attributed to surface electric-field-induced optical rectification 18,19 , rather than photoejected electrons. The waveform we obtained from InAs (Fig.…”
Section: Experiments and Resultsmentioning
confidence: 86%
“…3(a)) are very similar for both emitters, despite the differences in the terahertz generation mechanisms. According to our experimentally measured azimuthal dependence of the terahertz radiation amplitude, terahertz emission from InAs can be mainly attributed to surface electric-field-induced optical rectification 18,19 , rather than photoejected electrons. The waveform we obtained from InAs (Fig.…”
Section: Experiments and Resultsmentioning
confidence: 86%
“…We tackled this problem by considering a structured wave generated through a nonlinear optical process, as established, for example, in the state-of-the-art generation of THz radiation from ultrafast optical illumination. 36,37 As the THz beam is generated through a quadratic transformation (difference-frequency generation), there is a local linear dependence between the THz field and the incident optical intensity, namely, E THz (x, y, t) ∝ I opt (x, y, t). Such a relation allows precise control over the THz field profile both in time and space by shaping the incident optical pulse.…”
mentioning
confidence: 99%
“…where χ (3) is the third-order susceptibility of InAs, E sur f is the intrinsic surface potential field, E ω is the incident optical field and * stands for the complex conjugate. Quite interestingly, because the phenomenon is driven by a surface potential, it is also a measurable way to probe the dynamics of the carrier at the surface, and it has been proposed as the optical analogy of a Kelvin probe [48]. At very high pumping energies (above 10 μJ/cm 2 ), this phenomenon becomes critically saturated due to the electromagnetic screening role of dense carrier densities.…”
Section: A Route Towards Thinner Thz Emitters: Surface Emission From Quasi-2d Semiconductor Structuresmentioning
confidence: 99%